CAJ | 학술논문

基于薄膜全耗尽SOICMOS工艺,进行了建模分析,在300～600 K温度范围内,利用ISETCAD软件对SOICMOS器件单管高温特性进行了模拟分析,同时利用Verilog软件对激光测距电路进行了整体仿真.通过工艺流片,实现了一种电路级具有完整功能和参数要求的高温工作的激光测距SOICMOS集成电路.通过实际测试表明模拟结果与之相吻合,同时通过对整体电路结果功能和参数在常温和高温下的测试,表明该电路功耗低、速度快,可满足激光测距电路的要求.该电路的研制,对进一步开展高温短沟道SOICMOS集成电路的研究具有一定的指导意义.
기우박막전모진SOICMOS공예,진행료건모분석,재300～600 K온도범위내,이용ISETCAD연건대SOICMOS기건단관고온특성진행료모의분석,동시이용Verilog연건대격광측거전로진행료정체방진.통과공예류편,실현료일충전로급구유완정공능화삼수요구적고온공작적격광측거SOICMOS집성전로.통과실제측시표명모의결과여지상문합,동시통과대정체전로결과공능화삼수재상온화고온하적측시,표명해전로공모저、속도쾌,가만족격광측거전로적요구.해전로적연제,대진일보개전고온단구도SOICMOS집성전로적연구구유일정적지도의의.
Modeling analysis of thin fully depleted SOICMOS technology has been done. Using ISETCAD software,the high temperature characteristics of an SOICMOS transistor were simulated in the temperature range of from 300 to 600K, and the whole circuit of a laser range finder was simulated with Verilog software. By wafer processing,a circuit of a laser range finder with complete function and parameters working at high temperatures has been developed. The simulated results agree with the test results. The test of the circuit function and parameters at normal and high temperature shows the realization of an SOICMOS integrated circuit with low power dissipation and high speed,which can be applied in laser range finding. By manufacturing this device,further study on high temperature characteristics of shorter channel SOICMOS integrated circuits can be conducted.