CAJ | 학술논문

采用固态磷源分子束外延技术,在不同的生长条件下生长了InP外延材料,并用原子力显微镜对样品表面形貌进行了系统研究.实验结果表明,样品表面形貌的显著变化与生长模式发生变化有关;二维(2D)生长模式和三维(3D)生长模式之间存在转换的临界工艺条件.通过对实验数据的分析,绘制了InP外延生长模式对应工艺条件的区域分布图;在2D生长区域获得了高质量的InP/InP外延材料.
채용고태린원분자속외연기술,재불동적생장조건하생장료InP외연재료,병용원자력현미경대양품표면형모진행료계통연구.실험결과표명,양품표면형모적현저변화여생장모식발생변화유관;이유(2D)생장모식화삼유(3D)생장모식지간존재전환적림계공예조건.통과대실험수거적분석,회제료InP외연생장모식대응공예조건적구역분포도;재2D생장구역획득료고질량적InP/InP외연재료.
The surface morphologies of InP epilayers grown by solid source molecular beam epitaxy at different growth temperatures and P/In flux ratios have been systematically studied by atomic force microscopy (AFM). The results show that the remarkable variety of surface morphologies of samples is related to the transition of growth mode. Under a critical growth condition,a transition of growth mode is induced between a two-dimensional (2D) growth mode and a three-dimensional (3D) growth mode.On the basis of these results,a summary phase diagram is proposed for the growth mode of InP epilayers.Under the 2D growth region,high quality InP epilayers are obtained.