半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2007年
11期
1690-1695
,共6页
可变增益放大器%低压%低功耗%超外差接收机%CMOS射频集成电路
可變增益放大器%低壓%低功耗%超外差接收機%CMOS射頻集成電路
가변증익방대기%저압%저공모%초외차접수궤%CMOS사빈집성전로
variable gain amplifier%low voltage%low power%super heterodyne receiver%CMOS RF integrated circuits
针对超外差接收机的自动增益控制网络,设计了一种结构简单的低压、低功耗全差分可变增益放大器.它由6级子电路级联而成,提供范围为81dB的数字控制增益,每一档为3dB,增益误差小于0.5dB.该电路工作于中频300kHz下,工作电压为1.8V,功耗仅为1.35mW.采用TSMC 0.18μm 1P6M CMOS工艺制造,芯片面积约为0.24mm2,低功耗及小芯片面积使其极适用于便携式通信系统的应用.测试结果达到设计要求.
針對超外差接收機的自動增益控製網絡,設計瞭一種結構簡單的低壓、低功耗全差分可變增益放大器.它由6級子電路級聯而成,提供範圍為81dB的數字控製增益,每一檔為3dB,增益誤差小于0.5dB.該電路工作于中頻300kHz下,工作電壓為1.8V,功耗僅為1.35mW.採用TSMC 0.18μm 1P6M CMOS工藝製造,芯片麵積約為0.24mm2,低功耗及小芯片麵積使其極適用于便攜式通信繫統的應用.測試結果達到設計要求.
침대초외차접수궤적자동증익공제망락,설계료일충결구간단적저압、저공모전차분가변증익방대기.타유6급자전로급련이성,제공범위위81dB적수자공제증익,매일당위3dB,증익오차소우0.5dB.해전로공작우중빈300kHz하,공작전압위1.8V,공모부위1.35mW.채용TSMC 0.18μm 1P6M CMOS공예제조,심편면적약위0.24mm2,저공모급소심편면적사기겁괄용우편휴식통신계통적응용.측시결과체도설계요구.
This paper presents a low-voltage low-power variable gain amplifier,which is applied in the automatic gain control loop of a super heterodyne receiver.Six stages are cascaded to provide an 81dB digitally controlled gain range in a 3dB step.The gain step error is less than 0.5dB.It operates at an intermediate frequency of300kHz,and the power consumption is 1.35mW from a 1.8V supply.The prototype chip is implemented in a TSMC's 0.18μm 1P6M CMOS process and occupies approximately 0.24mm2.It is very suitable for portable wireless communication systems.The measurement results agree well with the system requirements.
