CAJ | 학술논문

基于分子束外延(MBE)生长技术,制备出了新颖的8×8 ZnS肖特基光电二极管阵列,研究了制备该器件的标准光刻,金属沉积,湿化学腐蚀,SiO2绝缘层沉积等一系列微电子处理工艺.该肖特基光电二极管阵列的光谱响应截止边为340nm.在400～250nm的可见光盲区域,光电响应测试显示该器件在截止边波长处具有0.15A/W的高响应度,相对应的量子效率为55%.成像测试显示该器件具有良好的紫外成像特性.
기우분자속외연(MBE)생장기술,제비출료신영적8×8 ZnS초특기광전이겁관진렬,연구료제비해기건적표준광각,금속침적,습화학부식,SiO2절연층침적등일계렬미전자처리공예.해초특기광전이겁관진렬적광보향응절지변위340nm.재400～250nm적가견광맹구역,광전향응측시현시해기건재절지변파장처구유0.15A/W적고향응도,상대응적양자효솔위55%.성상측시현시해기건구유량호적자외성상특성.
A different approach,using the molecular beam epitaxy (MBE)-grown ZnS-based Schottky photodiode technology,is applied to fabricate an 8×8 photodiode array.The micro-processing procedures of this photodiode array including standard photolithography,a number of metallisation,wet-chemical etching and SiO2 deposition for insulation are developed.The detector is characterized to have a cutoff wavelength at 340 nm and the photo-responsivity measurements on the pixels result an ultraviolet (UV) response as high as 0.15 A/W,corresponding to an external quantum efficiency of 55% in the visible-blind spectral ranging from 400 down to 250nm.Imaging tests indicate that this array is able to capture the intensity profile of a given UV light source with reasonably good capability.