Wafer bonding technique used for the integration of cubic GaN/GaAs (001) with Si substrate
  • 万方数据
    中国科学E辑(英文版) 중국과학E집(영문판)
    SCIENCE IN CHINA(SCIENTIA SINICA)
    2002年 3期 255-260 ,共6页

    孙元平%付羿%渠波%王玉田%冯志宏%沈小明%赵德刚%郑新和%段俐宏%李秉臣%张书明%杨辉%姜晓明%郑文莉%贾全杰

    손원평%부예%거파%왕옥전%풍지굉%침소명%조덕강%정신화%단리굉%리병신%장서명%양휘%강효명%정문리%가전걸



    wafer bonding%cubic%GaN/GaAs(001)%Si-substrate


    We successfully used the metal mediated-wafer bonding technique in transferring the as-grown cubic GaN LED structure of Si substrate. The absorbing GaAs substrate was removed by using the chemical solutions of NH4OH︰H2O2=1︰10. SEM and PL resuls show that wafer bonding technique could transfer the cubic GaN epilayers uniformly to Si without affecting the physical and optical properties of epilayers. XRD result shows that there appeared new peaks related to AgGa2 and Ni4N diffraction, indicating that the metals used as adhesive and protective layers interacted with the p-GaN layer during the long annealing process. It is just the reaction that ensures the reliability of the integration of GaN with metal and minor contact resistance on the interface.
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