CAJ | 학술논문

以稀土氧化物Eu_2O_3为添加剂,采用固相反应法制备了不同掺杂比例(质量比:x=0,0.2%,0.5%,1%)的CCTO陶瓷样品,利用SEM、XRD、4294A型高精密阻抗分析仪等测试手段对样品的微观结构、介电性能和交流电阻率进行了测试分析.掺杂之后样品的晶格结构并未发生改变,但是样品内部相对晶相含量和晶粒平均尺寸减小,同时掺杂阻碍了样品内部晶界处富铜相的生成;纯CCTO的XRD图谱中分别出现了CuO、TiO_2和CaCO_3杂相,掺杂样品的图谱中并未出现上述杂相;样品的介电性能与相同组分材料内部的相对晶相含量,晶粒平均尺寸和晶界处富铜相有很大关系.Eu_2O_3掺杂提高了样品介电性能的频率和温度稳定性.当掺杂量为0.2%和0.5%时,样品的介电性能得到较好改善效果.样品在低频40Hz和高频3.5MHz的交流电阻率测量结果很好的验证了Eu_2O_3掺杂导致的微结构变化对样品介电性能的影响.
이희토양화물Eu_2O_3위첨가제,채용고상반응법제비료불동참잡비례(질량비:x=0,0.2%,0.5%,1%)적CCTO도자양품,이용SEM、XRD、4294A형고정밀조항분석의등측시수단대양품적미관결구、개전성능화교류전조솔진행료측시분석.참잡지후양품적정격결구병미발생개변,단시양품내부상대정상함량화정립평균척촌감소,동시참잡조애료양품내부정계처부동상적생성;순CCTO적XRD도보중분별출현료CuO、TiO_2화CaCO_3잡상,참잡양품적도보중병미출현상술잡상;양품적개전성능여상동조분재료내부적상대정상함량,정립평균척촌화정계처부동상유흔대관계.Eu_2O_3참잡제고료양품개전성능적빈솔화온도은정성.당참잡량위0.2%화0.5%시,양품적개전성능득도교호개선효과.양품재저빈40Hz화고빈3.5MHz적교류전조솔측량결과흔호적험증료Eu_2O_3참잡도치적미결구변화대양품개전성능적영향.
The CaCu_3Ti_4O_(12) ceramics doped by Eu_2O_3 with different dopant contents(w%x=0,0.2%,0.5%,1%)are prepared by the traditional solid-state reaction method.SEM,XRD and Agilent 4294A Precision Impedance Analyzer are used to measure the phase structure,the morphology,dielectric properties and the ac resistivity of the samples.The results show that the crystal structures of CCTO doped by Eu_2O_3ale similar to that of pure CCTO.But Eu_2O_3-dopping can decrease the relative content of crystals in the CCTO ceramics with identical component and the average grain size and can also deter the formation of Cu -enriched phase in the grain boundary.The second phases of CuO、TiO_2 and CaCO_3 are present in the XRD pattern of pure CCTO and disappear in that of the samples doped by Eu_2O_3.In addition,it has been found that the dielectric properties of CCTO ceramics are greatly associated with the relative content of crystals in the CCTO ceramics with identical component,the average grain size and Cu-enriched phase in grain boundary.Eu_2O_3-dopping can improve the frequency and temperature stability of dielectric properties of the materials.The better improvement to the dielectric properties is achieved by doping 0.2w%and 0.5%of Eu_2O_3.The effect of microstructure changing on the dielectric properties after being doped by Eu_2O_3 has been well confirmed by the ac resistivity of samples measured at 40Hz and 3.5 MHz respectively.