稀有金属
稀有金屬
희유금속
CHINESE JOURNAL OF RARE METALS
2010年
2期
237-242
,共6页
涂凡%苏小平%屠海令%张峰燚%丁国强%王思爱
塗凡%囌小平%屠海令%張峰燚%丁國彊%王思愛
도범%소소평%도해령%장봉일%정국강%왕사애
数值模拟%GaAs%位错密度%残余应力%Raman光谱法%位错胞状结构
數值模擬%GaAs%位錯密度%殘餘應力%Raman光譜法%位錯胞狀結構
수치모의%GaAs%위착밀도%잔여응력%Raman광보법%위착포상결구
numerical simulation%GaAs%dislocation density%residual stress%Raman spectroscopy%dislocation cell patterns
采用数值模拟技术和Rnman光谱法对4 inch垂直梯度凝固(VGF)法GaAs单晶位错进行了研究.运用数值模拟软件计算了GaAs晶体生长过程中的位错分布,模拟计算与实验结果一致.通过Raman光谱测量,定量计算了晶片表面的残余应力分布.Raman测量结果表明,残余应力与位错密度分布基本一致.在VGF法生长的GaAs单晶中观察到了不完整的位错胞状结构,并利用Raman光谱法对其进行了微区分析.
採用數值模擬技術和Rnman光譜法對4 inch垂直梯度凝固(VGF)法GaAs單晶位錯進行瞭研究.運用數值模擬軟件計算瞭GaAs晶體生長過程中的位錯分佈,模擬計算與實驗結果一緻.通過Raman光譜測量,定量計算瞭晶片錶麵的殘餘應力分佈.Raman測量結果錶明,殘餘應力與位錯密度分佈基本一緻.在VGF法生長的GaAs單晶中觀察到瞭不完整的位錯胞狀結構,併利用Raman光譜法對其進行瞭微區分析.
채용수치모의기술화Rnman광보법대4 inch수직제도응고(VGF)법GaAs단정위착진행료연구.운용수치모의연건계산료GaAs정체생장과정중적위착분포,모의계산여실험결과일치.통과Raman광보측량,정량계산료정편표면적잔여응력분포.Raman측량결과표명,잔여응력여위착밀도분포기본일치.재VGF법생장적GaAs단정중관찰도료불완정적위착포상결구,병이용Raman광보법대기진행료미구분석.
The numerical simulation and Raman spectroscopy were employed to study the dislocations in the VGF( Vertical Gradient Freeze) GaAs single crystal. Dislocation distribution was calculated and the numerical results were in good agreement with the experi-mental results. Raman spectroscopy was used to calculate the residual stress on the wafer quantitatively. The residual stress distribution was similar to the dislocation density distribution evaluated by KOH melt etching. The dislocation arrangement without completed cellu-lar structures was observed.
