CAJ | 학술논문

实验过程中制备了3种不同周期的有机阱结构器件,分别用N,N'-diphenyl-N,N'-bis(1-napthyl)1,1'-biphenyll-4,4'-diamine(NPB)和4,4,N,N'-dicarbazolebiplaenyl(CBP)作为电子的势阱和势垒.讨论了3个器件在反向偏压调制下的光致发光的猝灭.研究结果显示在作者所制备的器件中NPB层中激子的猝灭速度要比CBP层中的激子猝灭速度快.这主要是因为NPB层中的有效电场要比CBP层中的有效电场强.当所制备的有机阱结构器件的周期数增加时,在相同的反向电场下,NPB和CBP层中的激子猝灭速度会随之增加,因为实验中制备的这3个器件为Ⅱ型量子阱结构,激子在这种阱结构器件中会随着阱周期数的增加而变得越来越不稳定,因此周期数较大的器件猝灭现象比较明显.
실험과정중제비료3충불동주기적유궤정결구기건,분별용N,N'-diphenyl-N,N'-bis(1-napthyl)1,1'-biphenyll-4,4'-diamine(NPB)화4,4,N,N'-dicarbazolebiplaenyl(CBP)작위전자적세정화세루.토론료3개기건재반향편압조제하적광치발광적졸멸.연구결과현시재작자소제비적기건중NPB층중격자적졸멸속도요비CBP층중적격자졸멸속도쾌.저주요시인위NPB층중적유효전장요비CBP층중적유효전장강.당소제비적유궤정결구기건적주기수증가시,재상동적반향전장하,NPB화CBP층중적격자졸멸속도회수지증가,인위실험중제비적저3개기건위Ⅱ형양자정결구,격자재저충정결구기건중회수착정주기수적증가이변득월래월불은정,인차주기수교대적기건졸멸현상비교명현.
Three organic devices with different quantum well period were fabricated.The potential barrier layer and well layer for electrons were made of N,N'-diphenyl-N,N'-his(1-napthyl)- 1,1'-biphenyl 1-4,4'-diamine(NPB)and 4,4,N,N' -dicarbazolebiphenyl(CBP).The photoluminescence quenching of these three devices under changed reverse voltages were studied.Results showed that photoluminescence quenching of NPB layer occurs more quickly than that of CBP layer in the authors' devices.This is because that the effective electric field in NPB layer is higher than that in CBP layer.The excitons in NPB and CBP layer were easily to be dissociated when the quantum well period increased under the same reverse voltage.Since these three devices are typeⅡquantum well structure,the excitons in these devices are not very stable.