CAJ | 학술논문

研究了镍纳米晶镶嵌在MOS(金属—氧化物一半导体)电容结构中应用于非挥发性存储器的可行性.制备了镶嵌在氧化层中的镍纳米晶.采用电子束蒸发方法,再经过快速退火工艺,得到平均尺寸7nm,密度1.5×1012/cm2的镍纳米晶.电容随频率变化曲线发现明显的峰,测试分析了电容-电压和电导-电压特性.结果表明电子通过直接隧穿停留在镍纳米晶中,并且存储在MOS结构中.
연구료얼납미정양감재MOS(금속—양화물일반도체)전용결구중응용우비휘발성존저기적가행성.제비료양감재양화층중적얼납미정.채용전자속증발방법,재경과쾌속퇴화공예,득도평균척촌7nm,밀도1.5×1012/cm2적얼납미정.전용수빈솔변화곡선발현명현적봉,측시분석료전용-전압화전도-전압특성.결과표명전자통과직접수천정류재얼납미정중,병차존저재MOS결구중.
Recently,nanocrystal nonvolatile memory (NVM) devices using nanocrystals (NCs) have attracted great research interest.In this work,we investigated the feasibility ofNi nanocrystals embedded in metal-oxide-semiconductor (MOS) capacitor structure for NVM application.Ni NCs embedded in the gate oxide was fabricated.Ni nanocrystals with an average size of 7 nm and density of 1.5×1012 cm-2 were synthesized by e-beam evaporation technique followed by rapid thermal annealing.Distinct frequency-dependent capacitance peaks were observed.High-frequency capacitance versus voltage (C-V) and conductance versus voltage (G-V) measurements were also characterized.These resuits demonstrate that electrons can be loaded onto Ni nanocrystals by direct tunneling and can be stored in the fabricated MOS structure.