CAJ | 학술논문

采用热扩散方法,对AlN薄膜进行了Si掺杂.利用电子能量散射谱(EDS)以及高温变温电导对薄膜进行了分析.EDS测试结果表明:在1250℃的温度下,氮化硅(SiNx)作为Si的扩散源,可以实现对AlN薄膜的Si热扩散掺杂.高温电流-电压(Ⅰ-Ⅴ)测试表明:在460℃测试温度下,AlN薄膜在热扩散掺杂以后,其电导从1.9×10-3S·m-1增加到2.1×10-2S·m-1.高温变温电导测试表明:氮空位(V3+N)和Si在AlN中的激活能为1.03eV和0.45eV.
채용열확산방법,대AlN박막진행료Si참잡.이용전자능량산사보(EDS)이급고온변온전도대박막진행료분석.EDS측시결과표명:재1250℃적온도하,담화규(SiNx)작위Si적확산원,가이실현대AlN박막적Si열확산참잡.고온전류-전압(Ⅰ-Ⅴ)측시표명:재460℃측시온도하,AlN박막재열확산참잡이후,기전도종1.9×10-3S·m-1증가도2.1×10-2S·m-1.고온변온전도측시표명:담공위(V3+N)화Si재AlN중적격활능위1.03eV화0.45eV.
This paper deals with the characteristics of aluminium nitride (AlN) films doped by silicon (Si) thermal diffusion.The films are analyzed by energy dispersive X-ray spectroscopy (EDS) and high-temperature dependent electrical conductivity.The results of EDS show that the Si element is successfully doped into the AlN films using SiNx as the diffusion source at the temperature of 1 250 ℃.The high-temperature current-voltage (Ⅰ-Ⅴ) measurements show that the electrical properties of the AlN films can be prominently improved by Si thermal diffusion,and at the measured temperature of 460 ℃ their electrical conductivities increase from 1.9 × 10-3 S · m-1 to 2.1 × 10-2S · m-1 after the Si thermal diffusion,The high-temperature dependence of thermal conductivity suggests that the activation energies of V3+N and Si are about 1.03 eV and 0.45 eV,respectively.