CAJ | 학술논문

建立了PNP型异质结双极晶体管基区少数载流子浓度的解析模型.理论分析了发射极-基极-发射极布局的PNP型HBT的电流增益.讨论了不同基极电流成分，如外基区表面复合电流，基极接触处的界面复合电流，基区体内复合电流，以及刻蚀台面处的台面复合电流对电流增益的影响.
건립료PNP형이질결쌍겁정체관기구소수재류자농도적해석모형.이론분석료발사겁-기겁-발사겁포국적PNP형HBT적전류증익.토론료불동기겁전류성분，여외기구표면복합전류，기겁접촉처적계면복합전류，기구체내복합전류，이급각식태면처적태면복합전류대전류증익적영향.
An analytical solution to the concentration of minor carriers in the base regio n of a PNPtype heterojunction bipolar transistor has been developed.The theore tical current gain of PNP heterojunction bipolar transistor with emitterbase emitter structure has been calculated based on the analytical model.The influenc e of different base current components on the current gain is discussed,includin g the extrinsic base surface recombination current,the interface recombination c urrent at base contact,the base bulk recombination current and the mesa recombin ation current.