CAJ | 학술논문

报道了128×128 AlGaAs/GaAs量子阱红外焦平面探测器阵列的设计和制作.采用金属有机化学气相淀积外延技术生长外延材料,并在GaAs集成电路工艺线上完成工艺制作.为得到器件参数,设计制作了台面尺寸为300μm×300μm的大面积测试器件;77K下2V偏压时暗电流密度为1.5×10-3A/cm2;80K工作温度下,器件峰值响应波长为8.4μm,截止波长为9μm,黑体探测率DB 为3.95×108(cm·Hz1/2)/W.将128×128元 AlGaAs/GaAs量子阱红外焦平面探测器阵列芯片与相关CMOS读出电路芯片倒装焊互连,在80K工作温度下实现了室温环境目标的红外热成像,盲元率小于1%.
보도료128×128 AlGaAs/GaAs양자정홍외초평면탐측기진렬적설계화제작.채용금속유궤화학기상정적외연기술생장외연재료,병재GaAs집성전로공예선상완성공예제작.위득도기건삼수,설계제작료태면척촌위300μm×300μm적대면적측시기건;77K하2V편압시암전류밀도위1.5×10-3A/cm2;80K공작온도하,기건봉치향응파장위8.4μm,절지파장위9μm,흑체탐측솔DB 위3.95×108(cm·Hz1/2)/W.장128×128원 AlGaAs/GaAs양자정홍외초평면탐측기진렬심편여상관CMOS독출전로심편도장한호련,재80K공작온도하실현료실온배경목표적홍외열성상,맹원솔소우1%.
We design and fabricate a 128×128 AlGaAs/GaAs quantum well infrared photodetector focal plane array (FPA).The device is achieved by metal organic chemical vapor deposition and GaAs integrated circuit processing technology.A test structure of the photodetector with a mesa size of 300μm×300μm is also made in order to obtain the device parameters.The measured dark current density at 77K is 1.5×10-3A/cm2 with a bias voltage of 2V.The peak of the responsivity spectrum is at 8.4μm,with a cutoff wavelength of 9μm.The blackbody detectivity is shown to be 3.95×108(cm·Hz1/2)/W.The final FPA is flip-chip bonded on a CMOS read-out integrated circuit.The infrared thermal images of some targets at room temperature background are successfully demonstrated at 80K operating temperature with a ratio of dead pixels of less than 1%.