CAJ | 학술논문

在微晶玻璃表面的超精密加工中,抛光磨料是抛光液重要的组成部分,它不仅影响着微晶玻璃的去除速率,而且对表面的粗糙度有着重要的影响.把超大规模集成电路的CMP技术引入到微晶玻璃的抛光中,在分析SiO_2/CeO_2混合磨料对微晶玻璃表面作用原理的基础上,进行了大量的实验研究,结果表明,通过调节SiO_2/CeO_2的配比和优化相关工艺参数可以得到应用所需的粗糙度及在此粗糙度下最大的去除速率.
재미정파리표면적초정밀가공중,포광마료시포광액중요적조성부분,타불부영향착미정파리적거제속솔,이차대표면적조조도유착중요적영향.파초대규모집성전로적CMP기술인입도미정파리적포광중,재분석SiO_2/CeO_2혼합마료대미정파리표면작용원리적기출상,진행료대량적실험연구,결과표명,통과조절SiO_2/CeO_2적배비화우화상관공예삼수가이득도응용소수적조조도급재차조조도하최대적거제속솔.
In the ultra-precision machining for glass-ceramics, abrasive is an important part of the slurry. It affects the removal rate of the glass-ceramics, and has a great influence on the surface roughness.CMP technology in VLSI was led into the glass-ceramics polishing. On the basis of the principle of SiO_2/CeO_2 abrasive to the glass-ceramics surface, lots of experiments were conducted. The results show that the roughness conform to the application and maximal removal rate under this roughness are obtained by adjusting the ratio of the SiO_2/CeO_2 abrasive and optimizing related process parameters.