CAJ | 학술논문

简要介绍了利用深反应离子刻蚀制作折叠波导慢波结构的现状及制作的工艺流程。对深反应离子刻蚀掩膜制作即光刻工艺,以及折叠波导慢波结构的深刻加工进行了深入的研究。详细分析了各光刻工艺对光刻胶图形的影响,尤其是前烘对光刻胶图像侧壁垂直度的影响;在深反应离子刻蚀中,还详细分析了刻蚀时间、下电极功率以及刻蚀气体气压对刻蚀结果的影响。经参数优化后获得最佳工艺参数,并制作出带有电子注通道的W波段折叠波导慢波结构,慢波结构深为946μm,侧壁垂直度为91°,电子注通道深为225μm,侧壁垂直度为90°。
간요개소료이용심반응리자각식제작절첩파도만파결구적현상급제작적공예류정。대심반응리자각식엄막제작즉광각공예,이급절첩파도만파결구적심각가공진행료심입적연구。상세분석료각광각공예대광각효도형적영향,우기시전홍대광각효도상측벽수직도적영향;재심반응리자각식중,환상세분석료각식시간、하전겁공솔이급각식기체기압대각식결과적영향。경삼수우화후획득최가공예삼수,병제작출대유전자주통도적W파단절첩파도만파결구,만파결구심위946μm,측벽수직도위91°,전자주통도심위225μm,측벽수직도위90°。
The recent progress and the main fabrication process of manufacturing folded waveguide slow wave structures using deep reactive ion etching（DRIE） technology are briefly presented with an emphasis on fabrication of the etching mask and the prototypical W band serpentine trench etched in Si using DRIE.Feasibility studies of effects of fabrication parameters on the photoresist pattern are presented,especially on profile of the photoresist pattern.In the process of DRIE,the effects of platen power and the etch time sequence on the etch rate,etch profile are also studied in detail,so as to obtain the optimal fabrication parameters.With the optimal fabrication parameters,W band folded waveguide slow wave structure with the beam tunnel is fabricated.The W band serpentine trench is approximately 946 μm deep and its profile is 91°,and the beam tunnel is approximately 225 μm and its profile is 90°.