CAJ | 학술논문

用热丝CVD的方法在3英寸的硅衬底上生长均匀的金刚石薄膜，应用了在热丝上方加石墨电极，在形核阶段相对于热丝施加一直流负偏压的预处理方法，使金刚石的成核密度达到1010－ 1011/cm2。在3英寸镜面抛光的硅衬底上制备了平整的金刚石薄膜,生长的薄膜用SEM及喇曼光谱进行了测试。实验发现电极的位置是影响金刚石薄膜均匀性的重要因素。
용열사CVD적방법재3영촌적규츤저상생장균균적금강석박막，응용료재열사상방가석 묵전겁，재형핵계단상대우열사시가일직류부편압적예처리방법，사금강석적성핵밀도체도1010－ 1011/cm2。재3영촌경면포광적규츤저상제비료평정적금강석박막,생장적박막용SEM급나만광 보진행료측시。실험발현전겁적위치시영향금강석박막균균성적중요인소。
Uniform diamond thin films with 3″ diameter were grown by hot filament chemical vapor deposition (HFCVD). Graphite electrodes which were located above the filament were applied, and negative bias relative to the filament were also applied during the nucleation stages. In such case, the diamond nucleation density can reach 1010～ 1011/cm2. A very uniform diamond film was grown on the mirror－polished  3″ Si wafer. The grown films were characterized by SEM and Raman spec－ troscopy. The position of electrodes are found to be the very important factor that effect the diamond growth uniformly.