CAJ | 학술논문

CZSi中掺入等价元素锗，能影响低温退火时氧沉淀过饱和成核的成核速率与密度。在700℃退火时，抑制杆状氧沉淀的生成，在900℃退火时，锗对氧沉淀的形态和长大几乎没有影响。实验表明，锗并不作为氧沉淀的成核中心，氧沉淀及其衍生的二次缺陷中也不包含锗。文中对锗影响氧沉淀的成核与形态进行了简要的讨论。
CZSi중참입등개원소타，능영향저온퇴화시양침정과포화성핵적성핵속솔여밀도。재700℃퇴화시，억제간상양침정적생성，재900℃퇴화시，타대양침정적형태화장대궤호몰유영향。실험표명，타병불작위양침정적성핵중심，양침정급기연생적이차결함중야불포함타。문중대타영향양침정적성핵여형태진행료간요적토론。
Doped in CZSi, Ge affects the coring rate and density of oxygenprecipitation. Formation of rod-like oxygen precipitation has been suppressed in CZSi doped with Ge, after annealing at 700℃. Ge can not affect the shape and growth of oxygen precipitation at 900℃ heat treatment. It is indicated that Ge can not act as core center of oxygen precipitation and Ge is not involved in precipitation and its secondary defects. In this paper, the influences of Ge on oxygen precipitation coring and the shape has been discussed.