CAJ | 학술논문

对液封直拉(LEC)非掺磷化铟(InP)进行930℃ 80h的退火可重复制备直径为50和75mm的半绝缘 (SI)衬底.退火是在密封的石英管内纯磷(PP)或磷化铁(IP)两种气氛下进行的.测试结果表明IP-SI InP衬底具有很好的电学性质和均匀性,而PP-SI的均匀性和电学参数都很差.在IP-SI样品的PL谱中出现与深缺陷有关的荧光峰.光激电流谱的测量结果表明:在IP气氛下退火获得的半绝缘磷化铟中的缺陷明显比PP-SI磷化铟的要少.并对退火后磷化铟中形成缺陷的机理进行了探讨.
대액봉직랍(LEC)비참린화인(InP)진행930℃ 80h적퇴화가중복제비직경위50화75mm적반절연 (SI)츤저.퇴화시재밀봉적석영관내순린(PP)혹린화철(IP)량충기분하진행적.측시결과표명IP-SI InP츤저구유흔호적전학성질화균균성,이PP-SI적균균성화전학삼수도흔차.재IP-SI양품적PL보중출현여심결함유관적형광봉.광격전류보적측량결과표명:재IP기분하퇴화획득적반절연린화인중적결함명현비PP-SI린화인적요소.병대퇴화후린화인중형성결함적궤리진행료탐토.
Semi-insulating (SI) InP wafers of 50 and 75mm in diameter can be obtained by annealing of undoped liquid encapsulated Czochralski (LEC) InP at 930℃ for 80h.The annealing ambient can be pure phosphorus (PP) or iron phosphide (IP).The IP-SI InP wafers have good electrical parameters and uniformity of whole wafer.However,PP-SI InP wafers exhibit poor uniformity and electrical parameters.Photoluminescence which is subtle to deep defect appears in IP-annealed semi-insulating InP.Traps in annealed SI InP are detected by the spectroscopy of photo-induced current transient.The results indicate that there are fewer traps in IP-annealed undoped SI InP than those in as-grown Fe-doped and PP-undoped SI InP.The formation mechanism of deep defects in annealed undoped InP is discussed.