CAJ | 학술논문

利用MBE外延材料和接触式光学光刻方式,成功制备出1.0μm栅长GaAs基MHEMT器件,分别蒸发Pt/Ti/Pt/Au和Ti/Pt/Au作为栅电极金属.获得了优越的DC和RF性能,Pt/Ti/Pt/Au和Ti/Pt/Au MHEMT器件的gm为502(503)mS/mm,JDss为382(530)mA/mm,VT为0.1(-0.5)V,fT和fmax分别为13.4(14.8),17.0(17.5)GHz.利用单片集成增强/耗尽型GaAs基MHEMT器件制备出九阶环型振荡器,直流电压为1.2V时,振荡频率达到777.6MHz,门延迟时间为71.4ps.利用Ti/Pt/Au MHEMT器件设计并制备出了DC-100Hz单刀双掷(SPDT)关MMIC,其插入损耗、隔离度、输入输出回波损耗分别优于2.93,23.34和20dB.
이용MBE외연재료화접촉식광학광각방식,성공제비출1.0μm책장GaAs기MHEMT기건,분별증발Pt/Ti/Pt/Au화Ti/Pt/Au작위책전겁금속.획득료우월적DC화RF성능,Pt/Ti/Pt/Au화Ti/Pt/Au MHEMT기건적gm위502(503)mS/mm,JDss위382(530)mA/mm,VT위0.1(-0.5)V,fT화fmax분별위13.4(14.8),17.0(17.5)GHz.이용단편집성증강/모진형GaAs기MHEMT기건제비출구계배형진탕기,직류전압위1.2V시,진탕빈솔체도777.6MHz,문연지시간위71.4ps.이용Ti/Pt/Au MHEMT기건설계병제비출료DC-100Hz단도쌍척(SPDT)관MMIC,기삽입손모、격리도、수입수출회파손모분별우우2.93,23.34화20dB.
1.0μm gate-length GaAs-based MHEMTs have been fabricated by MBE epitaxial material and contact-mode lithography technology. Pt/Ti/Pt/Au and Ti/Pt/Au were evaporated to form gate metals. Excellent DC and RF performances have been obtained,and the transconductance,maximum saturation drain current density,threshold voltage,current cut-off frequency, and maximum oscillation frequency of Pt/Ti/Pt/Au and Ti/Pt/Au MHEMTs were 502 (503)mS/mm,382(530)mA/mm,0.1(-0.5)V,13.4(14.8)GHz,and 17.0(17.5)GHz,respectively. DC-10GHz single-pole double-throw (SPDT) switch MMICs have been designed and fabricated by Ti/Pt/Au MHEMTs. Insertion loss,isolation,input,and output return losses of SPDT chips were better than 2.93,23.34,and 20dB.