CAJ | 학술논문

在利用氧离子注入工艺制备SOI材料的过程中,发现了一种"纳米网状"的结构缺陷.利用透射电镜、选区电子衍射和能谱分析对该缺陷进行了研究.结果表明,该缺陷呈网状,化学成分为硅和氧.初步研究认为,氧离子注入硅中所产生的穿通位错是形成该类缺陷的主要原因.
재이용양리자주입공예제비SOI재료적과정중,발현료일충"납미망상"적결구결함.이용투사전경、선구전자연사화능보분석대해결함진행료연구.결과표명,해결함정망상,화학성분위규화양.초보연구인위,양리자주입규중소산생적천통위착시형성해류결함적주요원인.
A new "nano-netted microstructure" defect is detected in separation by implanting oxygen(SIMOX)process.The defect is studied by using transmission electron microscope(TEM),selected area electron diffraction(SAD) and energy dispersive X-ray(EDX).The results show that the defect has many net cells,mainly comprised of silicon and oxygen.It is thought that the formation of this type of defect is related to the line dislocation in oxygen ion implantation preliminarily.