CAJ | 학술논문

由于银不会在硅表面与硅形成任何硅化物,银线成为在具有排状结构的Si(5 5 12)表面自组装纳米线的候选材料.本研究试用不同的银覆盖度和退火温度制作高纵横比的银纳米线.当覆盖度为0.1单原子层,先后两次退火温度分别为500℃和600～700℃,经缓慢冷却过程,非常规则的银链优先吸附在Si(5 5 12)面的四聚体上,从而形成高纵横比的银纳米线.这一自组装的两步退火过程可理解为:低温退火使吸附的银原子与Si表面结合;高温退火提供银原子扩散到Si表面四聚体位置的能量.
유우은불회재규표면여규형성임하규화물,은선성위재구유배상결구적Si(5 5 12)표면자조장납미선적후선재료.본연구시용불동적은복개도화퇴화온도제작고종횡비적은납미선.당복개도위0.1단원자층,선후량차퇴화온도분별위500℃화600～700℃,경완만냉각과정,비상규칙적은련우선흡부재Si(5 5 12)면적사취체상,종이형성고종횡비적은납미선.저일자조장적량보퇴화과정가리해위:저온퇴화사흡부적은원자여Si표면결합;고온퇴화제공은원자확산도Si표면사취체위치적능량.
As Ag can not form any silicide on Si surfaces, Ag wire is a candidate for self-assembled nanowire on row-like Si (5 5 12) -2×1 surfaces. In the present study, various Ag cov-erages and post-annealing temperatures had been tested to fabricate Ag nanowires with high as-pect ratio. When Ag coverage was 0.1 ML and the post-annealing temperature was around 500 ℃,the additional subsequent annealing at 600-700 ℃ and slow-cooling process, the well-ordered Agchains preferentially adsorbed on the tetramer sites, resulting in Ag nanowires with relatively highaspect ratio. It can be understood that, in the double step annealing process, the lower tempera-ture annealing is required for cohesion of adsorbed Ag atoms and the higher temperature anneal-ing is for providing Ag atoms to the tetramer sites.