CAJ | 학술논문

磁控溅射系统在恒定Ar气压和Ar气流流量下,使用不同射频溅射功率在Si(100)衬底上分别沉积Ca薄膜;随后,800℃真空退火1 h.立方相的Ca2Si薄膜首次、单独、直接生长在Si(100)衬底上.实验结果指出,在多相共生的Ca-Si化合物中,沉积Ca薄膜时的射频溅射功率影响了立方相Ca2Si薄膜的质量;最优化的溅射功率是85 W.另外,退火温度为800℃时,有利于单一相Ca2Si的独立生长.并且,退火时间也是关键因素.
자공천사계통재항정Ar기압화Ar기류류량하,사용불동사빈천사공솔재Si(100)츤저상분별침적Ca박막;수후,800℃진공퇴화1 h.립방상적Ca2Si박막수차、단독、직접생장재Si(100)츤저상.실험결과지출,재다상공생적Ca-Si화합물중,침적Ca박막시적사빈천사공솔영향료립방상Ca2Si박막적질량;최우화적천사공솔시85 W.령외,퇴화온도위800℃시,유리우단일상Ca2Si적독립생장.병차,퇴화시간야시관건인소.
Ca films were directly deposited on Si(100) substrates by Radio Frequency (R. F.) magnetron sputtering system (MS) under the different sputtering power and subsequent were annealed at 800 ℃ for lh in a vacuum furnace. The structural and morphological features of the resultant films were tested by XRD, FT-IR, SEM and EDAX. The cubic phase Ca2Si film was grown directly and individually on Si(100) substrate for the first time. The experimental result indicate that the selective growth of a single phase Ca-silicide in Ca-Si system of the existence of multiple silicide phases depends on sputtering conditions, annealing temperature and annealing time. The optimal sputtering power is 85 W for the cubic phase Ca2Si film growth. Besides, 800 ℃ is the adaptive annealing temperature for Ca2Si film growth. Additionally, annealing time is also a principal factor for CazSi film growth.