半导体技术
半導體技術
반도체기술
SEMICONDUCTOR TECHNOLOGY
2009年
8期
748-750
,共3页
分辨率增强光刻辅助化学收缩%"T"型栅%i线光刻胶%三层胶结构
分辨率增彊光刻輔助化學收縮%"T"型柵%i線光刻膠%三層膠結構
분변솔증강광각보조화학수축%"T"형책%i선광각효%삼층효결구
resolution enhancement lithography assisted by chemical shrink (RELACS)%T-gate%i-line resist%tri-layer resist structureEEACC: 2520%2550G
利用RELACS化学收缩辅助技术制作了i线三层胶结构的"T"型栅.首先利用水溶性的化学收缩试剂RELACS,涂在曝光完成的光刻图形上,然后借由混合烘焙让光刻胶中的光酸分子因受热而产生扩散运动并进入到RELACS试剂内,催化RELACS试剂,让RELACS试剂中的高分子与交链分子产生交链反应,使得光刻胶表面形成新的一层不溶于水的交链层而达到光刻图形收缩的目的.此方法增加了细栅光刻的宽容度,降低了细栅光刻制作的难度,极易将0.5 μm的栅条收缩到0.3μm,甚至更小,不但有效地减小了栅长,而且提高了细栅光刻的成品率.RELACS技术可以应用于不同光刻胶类型的"T",型栅制作中.
利用RELACS化學收縮輔助技術製作瞭i線三層膠結構的"T"型柵.首先利用水溶性的化學收縮試劑RELACS,塗在曝光完成的光刻圖形上,然後藉由混閤烘焙讓光刻膠中的光痠分子因受熱而產生擴散運動併進入到RELACS試劑內,催化RELACS試劑,讓RELACS試劑中的高分子與交鏈分子產生交鏈反應,使得光刻膠錶麵形成新的一層不溶于水的交鏈層而達到光刻圖形收縮的目的.此方法增加瞭細柵光刻的寬容度,降低瞭細柵光刻製作的難度,極易將0.5 μm的柵條收縮到0.3μm,甚至更小,不但有效地減小瞭柵長,而且提高瞭細柵光刻的成品率.RELACS技術可以應用于不同光刻膠類型的"T",型柵製作中.
이용RELACS화학수축보조기술제작료i선삼층효결구적"T"형책.수선이용수용성적화학수축시제RELACS,도재폭광완성적광각도형상,연후차유혼합홍배양광각효중적광산분자인수열이산생확산운동병진입도RELACS시제내,최화RELACS시제,양RELACS시제중적고분자여교련분자산생교련반응,사득광각효표면형성신적일층불용우수적교련층이체도광각도형수축적목적.차방법증가료세책광각적관용도,강저료세책광각제작적난도,겁역장0.5 μm적책조수축도0.3μm,심지경소,불단유효지감소료책장,이차제고료세책광각적성품솔.RELACS기술가이응용우불동광각효류형적"T",형책제작중.
RELACS (resolution enhancement lithography assisted by chemical shrink) process was used for fabricating T-gate by tri-layer resist technology. Firstly the "RELACS agent" was overcoated upon the developed pattern, then baking to form the insoluble cross-linking network layer along the resist pattern surface by crosslinking with acid in the resist. The latitude of the bottom was increased utilizing the cross-linking reaction. The process extended current lithography capability to print smaller critical dimension and enough shrinkage more than 0.3 μm can be easily observed. RELACS process can effectively reduce the gate length and improve the ratio of qualified products. RELACS process could be used to manufacture T-gate with various type photoresist.