CAJ | 학술논문

利用射频磁控溅射方法,在硅尖上沉积了氮化硼(BN)薄膜.红外光谱分析表明,BN薄膜结构为六角BN(h-BN)相(1380cm-1和780cm-1).在超高真空系统中测量了BN薄膜的场发射特性,与沉积在硅片上的BN薄膜比较,沉积在硅尖上的BN薄膜的场发射特性明显提高.开启电场为8V/μm,最高发射电流为300μA/cm2.沉积在硅尖上的BN薄膜的场发射FN曲线为两段直线,这可能是由于电子发射源于硅尖的尖部和根部造成的.
이용사빈자공천사방법,재규첨상침적료담화붕(BN)박막.홍외광보분석표명,BN박막결구위륙각BN(h-BN)상(1380cm-1화780cm-1).재초고진공계통중측량료BN박막적장발사특성,여침적재규편상적BN박막비교,침적재규첨상적BN박막적장발사특성명현제고.개계전장위8V/μm,최고발사전류위300μA/cm2.침적재규첨상적BN박막적장발사FN곡선위량단직선,저가능시유우전자발사원우규첨적첨부화근부조성적.
Boron nitride(BN) films are prepared on Si-tip arrays by rf magnetron sputtering physical vapor deposition(PVD). The FTIR spectra consists of two absorption bands at about 780cm-1 and 1380cm-1, which suggests the existence of the hexagonal phase of BN. The field emission characteristics of the BN films on Si-tips are compared with that of BN on Si wafer. The field emission characteristics of the BN-coated on Si-tips are evidently better than that of BN-coated on Si due to field enhancement effects of Si-tips. A turn-on electric field of 8V/μm and an emission current density of 300μA/cm2 are obtained for the BN-coated on Si-tips. Two portions of straight lines are obtained in the Fowler-Nordheim(FN) plots of BN-coated on Si-tips. This may be due to electron emission from the foot and tip of Si-tips.