CAJ | 학술논문

研究了2,3,3-三甲基-1-H-吲哚方酸菁的场效应性质,通过X射线衍射证实了方酸菁分子内电荷分离结构以及分子间面面堆积模式,并在Si/SiO2基片上通过真空蒸镀和旋涂的方法制备了p型晶体管器件.通过对器件性能与沟道形态的研究,我们发现退火处理能促进方酸菁薄膜由无定形态向多晶态转变,从而使薄膜晶体管的迁移率从10-5 cm2·V-1·S-1量级提高到10-3 cm2·V-1·s-1量级.顶接触结构单晶器件获得了7.8x 10-2 cm2·V-1·S-1的迁移率.未封装的方酸菁晶体管在大气中也表现出较好的稳定性.
연구료2,3,3-삼갑기-1-H-신타방산정적장효응성질,통과X사선연사증실료방산정분자내전하분리결구이급분자간면면퇴적모식,병재Si/SiO2기편상통과진공증도화선도적방법제비료p형정체관기건.통과대기건성능여구도형태적연구,아문발현퇴화처리능촉진방산정박막유무정형태향다정태전변,종이사박막정체관적천이솔종10-5 cm2·V-1·S-1량급제고도10-3 cm2·V-1·s-1량급.정접촉결구단정기건획득료7.8x 10-2 cm2·V-1·S-1적천이솔.미봉장적방산정정체관재대기중야표현출교호적은정성.
An indolium squarine 1,3-bis[(3,3-dimethylindolin-2-ylidene)methyl]squaraine was investigated as a semiconductor for use in organic field-effect transistors.Intramolecular charge separation and face to face packing were found by X-ray crystallography.p-Type thin film transistors were fabricated on Si/SiO2 substrates by thermal evaporation and spin-coating.By channel state research we found that annealing could improve the polycrystallization of the semiconductor film from the amorphous state and device mobility improved from 10-5 to 10-2 cm2· V-1· s-1.The highest mobility of 7.8 × 10-2 cm2· V-1· s-1 was achieved in a top contact single crystal device.ISQ transistors were also stable in air without encapsulation.