辐射研究与辐射工艺学报
輻射研究與輻射工藝學報
복사연구여복사공예학보
JOURNAL OF RADIATION RESEARCH AND RADIATION PROCESSING
2010年
1期
11-14
,共4页
骆燕%王德海%霍超%杨霞珍
駱燕%王德海%霍超%楊霞珍
락연%왕덕해%곽초%양하진
表面能%X射线光电子能谱%结合能%原子浓度
錶麵能%X射線光電子能譜%結閤能%原子濃度
표면능%X사선광전자능보%결합능%원자농도
Surface energy%XPS%Bindin genergy%Atom concentration
本文利用X射线光电子能谱(XPS),在空气和氮气氛围下,分别考察了探针组分BYK(R)-307(聚醚改性聚二甲基硅氧烷共聚体)、EFKA(R)-3772(氟碳改性聚丙烯酸)、BYK(R)-307+EFKA(R)-3772对丙烯酸类光固化膜表面的元素组成、电子结合能以及相对含量的影响.研究结果表明,在同时含有BYK(R)-307和EFKA(R)-3772的材料表面,Si和F的结合能较单一添加BYKR-307或EFKA(R)-3772的材料有显著的变化,分别相差0.4 eV和2.13 eV,表明两种元素所处的化学环境发生了较大变化,导致混合添加探针组分使材料表面能显著降低.此外,材料表面的Si元素含量较高,而F元素含量很少甚至探测不到,说明紫外光固化过程中,含Si元素的链段更易向材料表面迁移.
本文利用X射線光電子能譜(XPS),在空氣和氮氣氛圍下,分彆攷察瞭探針組分BYK(R)-307(聚醚改性聚二甲基硅氧烷共聚體)、EFKA(R)-3772(氟碳改性聚丙烯痠)、BYK(R)-307+EFKA(R)-3772對丙烯痠類光固化膜錶麵的元素組成、電子結閤能以及相對含量的影響.研究結果錶明,在同時含有BYK(R)-307和EFKA(R)-3772的材料錶麵,Si和F的結閤能較單一添加BYKR-307或EFKA(R)-3772的材料有顯著的變化,分彆相差0.4 eV和2.13 eV,錶明兩種元素所處的化學環境髮生瞭較大變化,導緻混閤添加探針組分使材料錶麵能顯著降低.此外,材料錶麵的Si元素含量較高,而F元素含量很少甚至探測不到,說明紫外光固化過程中,含Si元素的鏈段更易嚮材料錶麵遷移.
본문이용X사선광전자능보(XPS),재공기화담기분위하,분별고찰료탐침조분BYK(R)-307(취미개성취이갑기규양완공취체)、EFKA(R)-3772(불탄개성취병희산)、BYK(R)-307+EFKA(R)-3772대병희산류광고화막표면적원소조성、전자결합능이급상대함량적영향.연구결과표명,재동시함유BYK(R)-307화EFKA(R)-3772적재료표면,Si화F적결합능교단일첨가BYKR-307혹EFKA(R)-3772적재료유현저적변화,분별상차0.4 eV화2.13 eV,표명량충원소소처적화학배경발생료교대변화,도치혼합첨가탐침조분사재료표면능현저강저.차외,재료표면적Si원소함량교고,이F원소함량흔소심지탐측불도,설명자외광고화과정중,함Si원소적련단경역향재료표면천이.
The photosensitivity resins which contain BYK(R)-307,EFKA(R)-3772,and BYK(R)-307+EFKAR-3772 respectively were UV cured under different atmospheres(air and N2).The surface properties of the cured films were characterized by means of surface energy measurement and X-ray photoelectron spectroscopy.The results show that the surface energy of the films with mixed probe components drops obviously,also the bonding energy of Si and F are changed obviously,and the difference is 0.4 eV and 2.13 eV,respectively.It indicates that the chemical environment can transform the result in the different surface energy of the films.Furthermore,the content of Si is high,whereas the content of F is especially low and even can't be detected,which shows that it is easier fof the segment with Si to migrate to the surface during the curing process.