CAJ | 학술논문

报道了一种制作在SIMOX晶圆之上的总计量加固的2μm部分耗尽SOI CMOS 3线-8线译码器电路,其辐照特性由晶体管的阚值电压、电路的静态泄漏电流以及电流电压特性曲线表征.实验表明,该译码器的抗总剂量能力达3×105rad(Si),nMOS管和pMOS管在最坏情况下前栅沟道阈值漂移分别小于20和70mV,并且在辐照、退火以及后续追加辐照过程中无明显的泄漏电流增加,电路的功能并未退化.
보도료일충제작재SIMOX정원지상적총계량가고적2μm부분모진SOI CMOS 3선-8선역마기전로,기복조특성유정체관적감치전압、전로적정태설루전류이급전류전압특성곡선표정.실험표명,해역마기적항총제량능력체3×105rad(Si),nMOS관화pMOS관재최배정황하전책구도역치표이분별소우20화70mV,병차재복조、퇴화이급후속추가복조과정중무명현적설루전류증가,전로적공능병미퇴화.
The first domestic total dose hardened 2μm partially depleted silicon-on-insulator (PDSOI) CMOS 3-line to 8-line decoder fabricated in SIMOX is demonstrated. The radiation performance is characterized by transistor threshold voltage shifts, circuit static leakage currents, and I-V curves as a function of total dose up to 3 × 105 rad(Si). The worst case threshold voltage shifts of the front channels are less than 20mV for nMOS transistors at 3 × 105 rad(Si) and follow-up ir-radiation and less than 70mV for the pMOS transistors. Furthermore, no significant radiation induced leakage currents and functional degeneration are observed.