CAJ | 학술논문

在微波电路原理和半导体器件物理的基础上,设计和模拟了两种用于微波功率器件的测试电路,并且设计了与之配套的测试夹具.采用矢量网络分析仪对该测试电路和夹具在3～8GHz范围内进行了小信号测试.模拟和测试结果都表明,采用扇形线的测试电路性能较好.最后采用该电路和夹具对C波段AlGaN/GaN HEMT微波功率器件进行了微波功率测试,测试频率为5.4GHz.实验测得最大功率增益为8.75dB,最大输出功率为33.2dBm.
재미파전로원리화반도체기건물리적기출상,설계화모의료량충용우미파공솔기건적측시전로,병차설계료여지배투적측시협구.채용시량망락분석의대해측시전로화협구재3～8GHz범위내진행료소신호측시.모의화측시결과도표명,채용선형선적측시전로성능교호.최후채용해전로화협구대C파단AlGaN/GaN HEMT미파공솔기건진행료미파공솔측시,측시빈솔위5.4GHz.실험측득최대공솔증익위8.75dB,최대수출공솔위33.2dBm.
With the principles of microwave circuits and semiconductor device physics, two microwave power device test circuits combined with a test fixture are designed and simulated, whose properties are evaluated by a parameter network analyzer within the frequency range from 3 to 8GHz. The simulation and experimental results verify that the test circuit with a radial stub is better than that without. As an example, a C-band AlGaN/GaN HEMT microwave power device is tested with the designed circuit and fixture. With a 5.4GHz microwave input signal, the maximum gain is 8.75dB, and the maximum output power is 33.2dBm.