红外与毫米波学报
紅外與毫米波學報
홍외여호미파학보
JOURNAL OF INFRARED AND MILLIMETER WAVES
2010年
1期
6-9,68
,共5页
乔辉%邓屹%胡伟达%胡晓宁%张勤耀%李向阳%龚海梅
喬輝%鄧屹%鬍偉達%鬍曉寧%張勤耀%李嚮暘%龔海梅
교휘%산흘%호위체%호효저%장근요%리향양%공해매
辐照效应%电流机制%钝化%光伏探测器%碲镉汞
輻照效應%電流機製%鈍化%光伏探測器%碲鎘汞
복조효응%전류궤제%둔화%광복탐측기%제력홍
irradiation effect%current mechanism%passivation%photovoltaic detector%HgCdTe
对采用单层ZnS和双层CdTe/ZnS两种钝化层结构的长波碲镉汞光伏器件进行了实时γ辐照效应研究.通过辐照过程中实时测试器件的电流-电压特性,发现随着辐照剂量的增加,两种器件表现出不同的辐照效应.结合光伏器件的电流机制分析,对器件的电阻-电压曲线进行数值拟合,发现器件的主要电流机制在偏压较大时为间接隧道电流,在偏压较小及零偏压附近时为产生-复合电流.对辐照前后器件的电阻-电压曲线进行对比分析,认为CdTe/ZnS双层钝化结构有助于降低辐照位移效应的影响,使得器件间接隧道电流随辐照剂量无明显的增加;同时发现辐照电离效应的影响与器件材料的初始性能参数密切相关,拟合得到ZnS单层钝化结构的器件具有较高的少子产生-复合寿命,受电离效应的影响较大,导致其产生-复合电流随着辐照剂量增加持续增大.
對採用單層ZnS和雙層CdTe/ZnS兩種鈍化層結構的長波碲鎘汞光伏器件進行瞭實時γ輻照效應研究.通過輻照過程中實時測試器件的電流-電壓特性,髮現隨著輻照劑量的增加,兩種器件錶現齣不同的輻照效應.結閤光伏器件的電流機製分析,對器件的電阻-電壓麯線進行數值擬閤,髮現器件的主要電流機製在偏壓較大時為間接隧道電流,在偏壓較小及零偏壓附近時為產生-複閤電流.對輻照前後器件的電阻-電壓麯線進行對比分析,認為CdTe/ZnS雙層鈍化結構有助于降低輻照位移效應的影響,使得器件間接隧道電流隨輻照劑量無明顯的增加;同時髮現輻照電離效應的影響與器件材料的初始性能參數密切相關,擬閤得到ZnS單層鈍化結構的器件具有較高的少子產生-複閤壽命,受電離效應的影響較大,導緻其產生-複閤電流隨著輻照劑量增加持續增大.
대채용단층ZnS화쌍층CdTe/ZnS량충둔화층결구적장파제력홍광복기건진행료실시γ복조효응연구.통과복조과정중실시측시기건적전류-전압특성,발현수착복조제량적증가,량충기건표현출불동적복조효응.결합광복기건적전류궤제분석,대기건적전조-전압곡선진행수치의합,발현기건적주요전류궤제재편압교대시위간접수도전류,재편압교소급령편압부근시위산생-복합전류.대복조전후기건적전조-전압곡선진행대비분석,인위CdTe/ZnS쌍층둔화결구유조우강저복조위이효응적영향,사득기건간접수도전류수복조제량무명현적증가;동시발현복조전리효응적영향여기건재료적초시성능삼수밀절상관,의합득도ZnS단층둔화결구적기건구유교고적소자산생-복합수명,수전리효응적영향교대,도치기산생-복합전류수착복조제량증가지속증대.
The γ irradiation effects of long-wavelength HgCdTe photovoltaic detectors with different passivate structures(one structure was a single layer of ZnS and the other was double layers of CdTe/ZnS) were studied. A real-time measurement of current-voltage (I-V) characteristic was performed during the irradiation process. It is found that the detectors exhibit different irradiation effects as the irradiation dosages increase. Numerical fitting of the resistance-voltage (R-V) curves of detectors was made according to the current mechanism of photovoltaic detectors. It is found that the current is mainly trap-assisted-tunneling current(TAT) at larger reverse bias voltages. And it is generation-recombination current (G-R) at smaller and zero reverse bias voltages. After the analysis of R-V curves of detectors before and after irradiation, it is discovered that the double layers of CdTe/ZnS help to reduce the irradiation displacement effect and bring no obvious increase of indirect trap-assisted-tunneling current as the increase of irradiation dosage. It is also found that irradiation ionization effects are closely related to the initial material parameters of the detectors. Besides, it is also found that the detector with a single layer of ZnS has a higher generation-recombination lifetime of minority carriers by fitting method, and its generation-recombination current increases persistently as the increase of irradiation dosage.