CAJ | 학술논문

氨化硅基钒应变层氧化镓膜制备了大量氮化镓纳米线,X射线衍射、扫描电子显微镜和透射电子显微镜观察发现,纳米线具有十分光滑且干净的表面,其直径为20～60 nm左右,长度达到十几微米.高分辨透射电子显微镜和选区电子衍射分析结果表明,制备的氮化稼纳米线为六方纤锌矿结构.光致发光谱显示制备的氮化稼纳米线有良好的发光特性.另外,简单讨论了氮化稼纳米线的生长机制.
안화규기범응변층양화가막제비료대량담화가납미선,X사선연사、소묘전자현미경화투사전자현미경관찰발현,납미선구유십분광활차간정적표면,기직경위20～60 nm좌우,장도체도십궤미미.고분변투사전자현미경화선구전자연사분석결과표명,제비적담화가납미선위륙방섬자광결구.광치발광보현시제비적담화가납미선유량호적발광특성.령외,간단토론료담화가납미선적생장궤제.
Large-scale GaN nanowircs were synthesized on Si(111)substrates through ammoniating Ga2O3N films.The as-grown products woe characterized by X-ray diffraction(XRD),scanning electron microscopy(SEM)and transmission electron microscopy (TEM).The results reveal that the grown GaN nanowires have a smooth and clean surface with diameters ranging from 20 nm to 60 nm and lengths ofabout several tens of micrometers.The results of HRTEM and selected-area electron diffraction(SAED)show that the nanowires are pure hexagonal GaN single crystal.The photoluminescence(PL)spectrum indicates that the GaN nanowires have good emission property.The growth mechanism is discussed briefly.