半导体技术
半導體技術
반도체기술
SEMICONDUCTOR TECHNOLOGY
2009年
12期
1153-1156
,共4页
库黎明%闫志瑞%索思卓%周旗钢
庫黎明%閆誌瑞%索思卓%週旂鋼
고려명%염지서%색사탁%주기강
300 mm Si片%磨削%抛光%清洗
300 mm Si片%磨削%拋光%清洗
300 mm Si편%마삭%포광%청세
300 mm Si wafer%grinding%polishing%cleaning
65 nm及以下线宽对Si片表面的各方面性能要求越来越高,主要体现在两个方面,一个是加工工艺,另一个是加工设备.在加工方法上,65 nm线宽用300 mm Si片不同于90 nm,如运用多步单片精密磨削,不仅可以提高表面几何参数,还可以减小表面特别是亚表面的损伤层.而对于加工设备,要求更加精密,特别是单面精抛光,在保证去除量的同时还要使Si片表面各点的去除量保持均匀.对目前300 mm Si片的磨削、抛光及清洗的每一道工艺流程,特别是相对于65 nm技术的一些加工流程及方法的最新发展进行了详细的论述,指出了300 mm Si片加工工艺的发展趋势.
65 nm及以下線寬對Si片錶麵的各方麵性能要求越來越高,主要體現在兩箇方麵,一箇是加工工藝,另一箇是加工設備.在加工方法上,65 nm線寬用300 mm Si片不同于90 nm,如運用多步單片精密磨削,不僅可以提高錶麵幾何參數,還可以減小錶麵特彆是亞錶麵的損傷層.而對于加工設備,要求更加精密,特彆是單麵精拋光,在保證去除量的同時還要使Si片錶麵各點的去除量保持均勻.對目前300 mm Si片的磨削、拋光及清洗的每一道工藝流程,特彆是相對于65 nm技術的一些加工流程及方法的最新髮展進行瞭詳細的論述,指齣瞭300 mm Si片加工工藝的髮展趨勢.
65 nm급이하선관대Si편표면적각방면성능요구월래월고,주요체현재량개방면,일개시가공공예,령일개시가공설비.재가공방법상,65 nm선관용300 mm Si편불동우90 nm,여운용다보단편정밀마삭,불부가이제고표면궤하삼수,환가이감소표면특별시아표면적손상층.이대우가공설비,요구경가정밀,특별시단면정포광,재보증거제량적동시환요사Si편표면각점적거제량보지균균.대목전300 mm Si편적마삭、포광급청세적매일도공예류정,특별시상대우65 nm기술적일사가공류정급방법적최신발전진행료상세적논술,지출료300 mm Si편가공공예적발전추세.
65 nm and below node technology requires all the parameters of wafers more critically, mainly reflected in two aspects, one is processing method, the other is the equipment. In the processing, 65 nm width is different from 90 nm, such as the use of multi-step single-side grinding, which can improve the surface geometry and reduce the surface, especially the sub-surface damage layer. As for the equipment, it requires more critically, especially in single-side polishing, which guarantees all the points on the surface removed uniformly. The new development of every process of 300 mm wafer manufacture, grinding, polishing and cleaning, especially about 65 nm node technology are introduced. At the same time, it points out the developing tendency of the 300 mm wafers manufacturing process.
