高电压技术
高電壓技術
고전압기술
HIGH VOLTAGE ENGINEERING
2011年
7期
1740-1745
,共6页
刘进%陈永光%谭志良%陈京平
劉進%陳永光%譚誌良%陳京平
류진%진영광%담지량%진경평
集成电路%静电放电(ESD)脉冲%方波脉冲%损伤效应%曲线拟合%相关性
集成電路%靜電放電(ESD)脈遲%方波脈遲%損傷效應%麯線擬閤%相關性
집성전로%정전방전(ESD)맥충%방파맥충%손상효응%곡선의합%상관성
integrated circuit%electrostatic discharge(ESD) pulse%rectangular pulse%damage effects%curve fitting%correlation
为了分析复杂波形脉冲注入对集成电路的损伤特点,找出不同波形参数的脉冲注入损伤效应相关性,用方波脉冲和不同模型的静电放电(ESD)对5种具有典型代表意义的集成电路器件进行注入损伤效应实验,并给出了器件的损伤电压、损伤功率、损伤能量等值。采用曲线拟合的分析法,基于实验数据建立起脉冲特性参数与器件损伤参数间的数学关系,其函数拟合精度很高,可为进一步研究器件的电磁损伤机理提供指导。实验结果表明:能量型损伤为集成电路器件损伤的一种主要形式,其损伤机理是由于在PN结上的能量积累使得温度升高而最终热烧毁。各器件的能量损伤阂值与其平均值相比,平均变化区间度处于10%~20%之间,故能量可作为这种损伤模式的主要判定参数。静电放电的损伤阈值普遍略小于方波脉冲的损伤阈值,但不同脉冲注入下器件的损伤规律类似,只有量的不同而没有质的不同。
為瞭分析複雜波形脈遲註入對集成電路的損傷特點,找齣不同波形參數的脈遲註入損傷效應相關性,用方波脈遲和不同模型的靜電放電(ESD)對5種具有典型代錶意義的集成電路器件進行註入損傷效應實驗,併給齣瞭器件的損傷電壓、損傷功率、損傷能量等值。採用麯線擬閤的分析法,基于實驗數據建立起脈遲特性參數與器件損傷參數間的數學關繫,其函數擬閤精度很高,可為進一步研究器件的電磁損傷機理提供指導。實驗結果錶明:能量型損傷為集成電路器件損傷的一種主要形式,其損傷機理是由于在PN結上的能量積纍使得溫度升高而最終熱燒燬。各器件的能量損傷閡值與其平均值相比,平均變化區間度處于10%~20%之間,故能量可作為這種損傷模式的主要判定參數。靜電放電的損傷閾值普遍略小于方波脈遲的損傷閾值,但不同脈遲註入下器件的損傷規律類似,隻有量的不同而沒有質的不同。
위료분석복잡파형맥충주입대집성전로적손상특점,조출불동파형삼수적맥충주입손상효응상관성,용방파맥충화불동모형적정전방전(ESD)대5충구유전형대표의의적집성전로기건진행주입손상효응실험,병급출료기건적손상전압、손상공솔、손상능량등치。채용곡선의합적분석법,기우실험수거건립기맥충특성삼수여기건손상삼수간적수학관계,기함수의합정도흔고,가위진일보연구기건적전자손상궤리제공지도。실험결과표명:능량형손상위집성전로기건손상적일충주요형식,기손상궤리시유우재PN결상적능량적루사득온도승고이최종열소훼。각기건적능량손상애치여기평균치상비,평균변화구간도처우10%~20%지간,고능량가작위저충손상모식적주요판정삼수。정전방전적손상역치보편략소우방파맥충적손상역치,단불동맥충주입하기건적손상규률유사,지유량적불동이몰유질적불동。
In order to study the damage mechanism of integrated circuits {ICs) caused by complicated pulses, and to find out the dependencies between impulses characteristics and damage effects, both the electrostatic discharge {ESD) pulses and rectangular pulses have been injected into the ICs. Consequently, five representative ICs were chosen as the test samples, and their failure parameters such as current, power and energy were presented. The relationship between the waveform characteristics and failure parameters was extracted in the way of curve fitting. Meanwhile, the fitted mathematic function with high accuracy was also got, which was useful to the further studies on the damage mechanism of ICs. The experimental results show that failure of the samples is mainly caused by energy, because the overheating of PN junction caused by injected pulses makes the ICs damaged permanently. The energy values of pulses damaging test samples are almost constant with varued pulse widths or amplitudes, and the normalized deviation is about 10%~20%. As a result, the energy of impulse can be chosen as the failure criterion to evaluate this kind of integrated circuits. It is also reported that the damage threshold of ICs caused by ESD is lower than the value caused by rectangular pulses. Though the injected pulse is different, the essential damage rule is similar.