CAJ | 학술논문

采用MOCVD技术以Al2O3为衬底在GaN膜上生长了InGaN薄膜.以卢瑟福背散射/沟道（RBS/Channeling）技术和光致发光（PL）技术对InxGa1-xN/GaN/Al2O3样品进行了测试，获得了合金层的组分、厚度、元素随深度分布、结晶品质及发光性能等信息.研究表明生长温度和TMIn/TEGa比对InGaN薄膜的In组分和生长速率影响很大.在一定范围内，降低TMIn/TEGa比，InGaN膜的生长速率增大，合金的In组分反而提高.降低生长温度，InGaN膜的In组分提高，但生长速率基本不变.InGaN薄膜的结晶品质随In组分的增大而显著下降,InGaN薄膜的In组分由0.04增大到0.26，其最低沟道产额比由4.1%增至51.2%.InGaN薄膜中In原子易处于替位位置，在所测试的In组分范围，In原子的替位率均在98%以上.得到的质量良好的In0.04Ga0.96N薄膜的最低产额为4.1%.研究结果还表明用RBS技术和光致发光技术测定InGaN中In组分的结果相差很大,InGaN的PL谱要受较多因素影响，很难准确测定In组分，而以RBS技术得到的结果是可靠的.
채용MOCVD기술이Al2O3위츤저재GaN막상생장료InGaN박막.이로슬복배산사/구도（RBS/Channeling）기술화광치발광（PL）기술대InxGa1-xN/GaN/Al2O3양품진행료측시，획득료합금층적조분、후도、원소수심도분포、결정품질급발광성능등신식.연구표명생장온도화TMIn/TEGa비대InGaN박막적In조분화생장속솔영향흔대.재일정범위내，강저TMIn/TEGa비，InGaN막적생장속솔증대，합금적In조분반이제고.강저생장온도，InGaN막적In조분제고，단생장속솔기본불변.InGaN박막적결정품질수In조분적증대이현저하강,InGaN박막적In조분유0.04증대도0.26，기최저구도산액비유4.1%증지51.2%.InGaN박막중In원자역처우체위위치，재소측시적In조분범위，In원자적체위솔균재98%이상.득도적질량량호적In0.04Ga0.96N박막적최저산액위4.1%.연구결과환표명용RBS기술화광치발광기술측정InGaN중In조분적결과상차흔대,InGaN적PL보요수교다인소영향，흔난준학측정In조분，이이RBS기술득도적결과시가고적.
The InGaN/GaN films have been grown on (0001) sapphire substrates by metalorganic chemical vapor deposition (MOCVD) under the atmospheric pressure.Properties of these films are investigated by making Rutherford backscattering/channeling measurements and photoluminescence at room temperature and 77K,respectively.The InN content and the growth rate of the InGaN films are found to be greatly influenced by the growth temperature and TMIn/TEGa ratio.The growth rate of InGaN films increases with the decrease of TMIn/TEGa ratio,but varies slightly with the reduction of growth temperature.InN content in InGaN films is enhanced with the growth temperature decreasing.However,it can also be promoted by decreasing the TMIn/TEGa ratio at the same growth temperature.Minimum surface yield χmin of InGaN films is ranging from 4.1% to 51.2%，when the InN percent is enhanced from 0.04 to 0.26.In atoms in the InGaN films are highly substituted,with the value of substitutionality over 98% in our measurement.The minimum surface yield χmin of In0.04Ga0.96N films is only 4.1%,which is grown at 760℃.There is great difference between the In percents in InGaN films obtained by Rutherford backscattering measurements and photoluminescence,respectively.The values obtained by Rutherford backscattering measurements are more reliable since many factors would influence the photoluminescence of InGaN films.