CAJ | 학술논문

文中采用直流磁控溅射法制备了YBCO超导薄膜，研究了镀膜过程中不同的气体总压、氧氩比、薄膜厚度以及退火温度对薄膜性质的影响，通过XRD分析，当总气压为40Pa、氧氩比为1：2、厚度为1μm、退火温度为800℃时，是薄膜生长的最佳条件。总气压过低，镀膜过程不能进行，气压过高，分子间自由程增加，溅射速率降低；氧氩比较低时，氧离子较少，造成靶材缺氧，镀膜过程不能进行，氧氩比较高时，辉光明亮，对靶材造成损害；随着薄膜厚度的增加，薄膜的005峰半高宽由大逐渐减小，薄膜厚度为1μm时，半高宽最小。退火温度在780℃～800℃之间时，YBCO薄膜005峰的半高宽较小。
문중채용직류자공천사법제비료YBCO초도박막，연구료도막과정중불동적기체총압、양아비、박막후도이급퇴화온도대박막성질적영향，통과XRD분석，당총기압위40Pa、양아비위1：2、후도위1μm、퇴화온도위800℃시，시박막생장적최가조건。총기압과저，도막과정불능진행，기압과고，분자간자유정증가，천사속솔강저；양아비교저시，양리자교소，조성파재결양，도막과정불능진행，양아비교고시，휘광명량，대파재조성손해；수착박막후도적증가，박막적005봉반고관유대축점감소，박막후도위1μm시，반고관최소。퇴화온도재780℃～800℃지간시，YBCO박막005봉적반고관교소。
YBCO superconducting thin film is processed by direct current sputtering in this paper. We have researched the nature of the thin film by the different gas pressure, oxygen argon ratios, film thickness and annealing temperature, and got the best coating film conditions by XRD analysis. Total pressure is too low, coating process cannot undertake, total pressure is exorbitant, mean free path reduced and sputtering rate increased; oxygen argon ratios is too low, then oxygen ion less, sputtering process cannot undertake, oxygen argon is too high, glow bright and damage to target material; along with the increase of thin film thickness, the changes of full width at half maximum of the films from big decrease gradually, film thickness of 1μ m, full width at half maximum of the films is smallest. Annealing at a temperature between 780 and 800℃, the 005 peak of YBCO film by full width at half maximum smaller.