CAJ | 학술논문

在Si(100)衬底上,用直流磁控溅射沉积约100nm的纯金属Fe膜,然后在600～1000℃真空退火2h.用能量为3MeV的C离子进行了卢瑟福背散射(RBS)测量,并用SIMNRA 6.0程序分析了测量结果,给出了界面附近Fe原子与Si原子间互扩散的完整图像.扫描电镜(SEM)观察和X射线衍射(XRD)测量表征了不同温度退火2h后Fe/Si系统表面的显微结构和晶体结构.由RBS、XRD测量与SEM观察结果,分析了退火过程对磁控溅射制备的Fe/Si双层膜结构原子间的互扩散行为、硅化物形成及显微结构的影响.
재Si(100)츤저상,용직류자공천사침적약100nm적순금속Fe막,연후재600～1000℃진공퇴화2h.용능량위3MeV적C리자진행료로슬복배산사(RBS)측량,병용SIMNRA 6.0정서분석료측량결과,급출료계면부근Fe원자여Si원자간호확산적완정도상.소묘전경(SEM)관찰화X사선연사(XRD)측량표정료불동온도퇴화2h후Fe/Si계통표면적현미결구화정체결구.유RBS、XRD측량여SEM관찰결과,분석료퇴화과정대자공천사제비적Fe/Si쌍층막결구원자간적호확산행위、규화물형성급현미결구적영향.
Pure metal Fe films with thickness of about 100nm were deposited on Si (100) substrates by DC magnetron sputtering.Annealing was subsequently performed in a vacuum furnace in the temperature range of 600～1000℃ for 2h.The samples were characterized by means of Rutherford backscattering (RBS) with 3MeV carbon ions.The RBS data were fitted with SIMNRA 6.0,and the results show the atomic interdiffusion in Fe/Si systems.The microstructures and crystal structures were characterized by scanning electron microscope and X-ray diffraction.The effects of annealing on atomic interdiffusion,silicide formation,and microstructures in Fe/Si systems were analyzed.