CAJ | 학술논문

研究了薄基区HBT合金温度对残余电压Voffset和欧姆接触电阻Rcontact的影响,给出了薄基区HBT的最佳合金温度区域.用肖特基钳位理论解释了合金温度过高导致Voffset偏大的现象.从晶体管基本物理机制推导出Voffset与集电极、发射极面积比Ac/Ae的关系,并用此解释了U形发射极HBT具有较小Ac/Ae的原因,进一步证明了U型发射极结构的优越性.
연구료박기구HBT합금온도대잔여전압Voffset화구모접촉전조Rcontact적영향,급출료박기구HBT적최가합금온도구역.용초특기겸위이론해석료합금온도과고도치Voffset편대적현상.종정체관기본물리궤제추도출Voffset여집전겁、발사겁면적비Ac/Ae적관계,병용차해석료U형발사겁HBT구유교소Ac/Ae적원인,진일보증명료U형발사겁결구적우월성.
The alloy temperature dependence of Voffset and Rcontact is studied,and an optimal alloy temperature range for the best trade-off between Voffset and Rcontact is given for thin base HBTs.In addition,the reason for the high Voffset at high alloy temperature is interpreted using Schottky clamped theory.The lower Voffset of our U-shaped emitter HBT than that of traditional strip emitter HBTs is explained.