CAJ | 학술논문

报道了分子束外延生长的1.3μm多层InGaAs/InAs/GaAs自组织量子点及其室温连续激射激光器.室温带边发射峰的半高宽小于35meV,表明量子点大小比较均匀.原子力显微镜图像显示,量子点密度可以控制在(1～7)×1010cm-2范围之内,而面密度处于4×1010cm-2时有良好的光致发光谱性能.含有三到五层1. 3μm量子点的激光器成功实现了室温连续激射.
보도료분자속외연생장적1.3μm다층InGaAs/InAs/GaAs자조직양자점급기실온련속격사격광기.실온대변발사봉적반고관소우35meV,표명양자점대소비교균균.원자력현미경도상현시,양자점밀도가이공제재(1～7)×1010cm-2범위지내,이면밀도처우4×1010cm-2시유량호적광치발광보성능.함유삼도오층1. 3μm양자점적격광기성공실현료실온련속격사.
The growth of multi-layer InGaAs/InAs/GaAs self-assembled quantum dots (QDs) by molecular beam epitaxy (MBE) is investigated,and a QD laser diode lasing at 1.33μm in continuous operation mode at room temperature is reported. The full width at half maximum of the band edge emitting peaks of the photoluminescence(PL) spectra at room temperature is less than 35meV for most of the multi-layer QD samples,revealing good,reproducible MBE growth conditions. Moreover, atomic force microscopy images show that the QD surface density can be controlled in the range from 1 × 1010 to 7 × 1010cm-2. The best PL properties are obtained at a QD surface density of about 4 × 1010cm-2. Edge emitting lasers containing 3 and 5 stacked QD layers as the active layer lasing at room temperature in continuous wave operation mode are reported.