CAJ | 학술논문

对于等离子体浸没离子注入(PIII)技术，球形靶鞘层尺度预测对真空室设计、批量处理研究等是十分有用的。但由于球形靶鞘层Child-Langmuir定律数学表达的非线性使得工程应用较为困难。本文对球形靶的鞘层尺度进行了数值求解、讨论了注入参数对鞘层尺度的影响。计算结果表明，鞘层厚度(包括离子阵鞘层和稳态鞘层)随球体半径或注入电压增加而增加，随等离子体密度增加而减小。但对于不同的参数区间，鞘层特性对参数的变化表现出不同的敏感性。当等离子体密度较高、注入电压较低时，稳态鞘层厚度对于靶体半径的变化极不敏感。相反鞘层厚度对靶体大小变化较为敏感。虽然平面靶与球形靶的离子阵鞘层尺度比值与等离子体密度及球体半径有关，但平面靶稳态鞘层尺度总是大于球形靶的。这对于实际的PIII应用具有重要的指导意义。
대우등리자체침몰리자주입(PIII)기술，구형파초층척도예측대진공실설계、비량처리연구등시십분유용적。단유우구형파초층Child-Langmuir정률수학표체적비선성사득공정응용교위곤난。본문대구형파적초층척도진행료수치구해、토론료주입삼수대초층척도적영향。계산결과표명，초층후도(포괄리자진초층화은태초층)수구체반경혹주입전압증가이증가，수등리자체밀도증가이감소。단대우불동적삼수구간，초층특성대삼수적변화표현출불동적민감성。당등리자체밀도교고、주입전압교저시，은태초층후도대우파체반경적변화겁불민감。상반초층후도대파체대소변화교위민감。수연평면파여구형파적리자진초층척도비치여등리자체밀도급구체반경유관，단평면파은태초층척도총시대우구형파적。저대우실제적PIII응용구유중요적지도의의。
It is of great practical importance to predict the sheath evolution during plasma immersion ion implantation (PIII)of spherical targets in order to properly design the vacuum chamber and treatment processes.However,owing to non-linearity,it is difficult to solve the Child-Langmuir equation to elucidate the sheath dynamics directly in pracitical circumstances.In this paper, sheath scaling for PIII into a spherical target is investigated using numerical methods.Our results demonstrate that the sheath thickness,including the initial ion-matrix sheath and final steady-state sheath,increases with the increase of the spherical radius or applied voltage,and decreases with increasing plasma density.The sheath scale varies to a different degree with respect to parameter change for different processing conditions.For a high plasma density and low applied voltage,the steady-state sheath thickness is more or less insensitive to variations in the spherical radius,but it is very sensitive under other conditions.The ratio of the ion-matrix sheath thickness of a planar target to that of a spherical target depends considerably on the plasma density and the spherical radius.In fact,the steady-state sheath thickness of a planar target is more than that of a spherical target regardless of changes in the plasma density or target size.Our results are important to the design of practical PIII processes.