CAJ | 학술논문

提出了一种新结构薄膜SOILIGBT——漂移区减薄的多沟道薄膜SOILIGBT(DRT-MCTFSOILIGB）。主要研究了其低压截止态泄漏电流在423～573K范围的温度特性。指出，通过合理的设计可以使该种新器件具有很低的截止态高温泄漏电流，很高的截止态击穿电压，足够大的正向导通电流和足够低的正向导通压降。还指出，它不仅适用于高温低压应用，而且适用于高温高压应用。
제출료일충신결구박막SOILIGBT——표이구감박적다구도박막SOILIGBT(DRT-MCTFSOILIGB）。주요연구료기저압절지태설루전류재423～573K범위적온도특성。지출，통과합리적설계가이사해충신기건구유흔저적절지태고온설루전류，흔고적절지태격천전압，족구대적정향도통전류화족구저적정향도통압강。환지출，타불부괄용우고온저압응용，이차괄용우고온고압응용。
A novel structural thin-film SOI LIGBT——drift region thinnedmulti-channel thin-film SOI LIGBT（DRT-MC TFSOI LIGB）——is presented．Its temperature characteristics of off-state leakage current between 423～573 K at low voltage are investigated．It is indicated that excellent characteristics of off-state leakage current at high temperatures and very high off-state breakdown voltage and sufficiently large forward current and low forward voltage drop may be obtained by reasonable designs．It is also indicated that it can be applied not only to high-temperature and low voltage applications but also to high-temperature and high voltage applications．