无机材料学报
無機材料學報
무궤재료학보
JOURNAL OF INORGANIC MATERIALS
2000年
2期
209-220
,共12页
晏海学%李承恩%周家光%朱为民
晏海學%李承恩%週傢光%硃為民
안해학%리승은%주가광%주위민
铋层状结构%性能%居里点
鉍層狀結構%性能%居裏點
필층상결구%성능%거리점
bismuth layer-structured%properties%curie temperature
综述了铋层状压电陶瓷的结构特点及性能研究. 铋层状压电陶瓷的结构由(Bi2O2)2+层和钙钛矿层(Am-1BmO3m+1)2-按一定规则共生排列而成. 此处A为适合于12配位的离子; B 为适合于八面体配位的离子,m为一整数,其值一般为1~5. 与钛酸钡(BaTiO3)或锆钛酸铅(PZT)陶瓷相比,铋层状压电陶瓷具有以下特点:低介电常数、高T c、机电耦合系数各向异性明显、低老化率、高电阻率等.
先前研究证明,居里温度不仅与极化原子位移、自发极化强度、A位Bi含量有关,而且还与取代离子的特性诸如离子半径、电负性、核外电子排布有关. 压电活性低是铋层状陶瓷的本质缺点,通常发展该材料的途径为化学取代或晶粒取向技术. 研究材料结构与性能之间的关系有助于发展铋层状压电陶瓷材料.
綜述瞭鉍層狀壓電陶瓷的結構特點及性能研究. 鉍層狀壓電陶瓷的結構由(Bi2O2)2+層和鈣鈦礦層(Am-1BmO3m+1)2-按一定規則共生排列而成. 此處A為適閤于12配位的離子; B 為適閤于八麵體配位的離子,m為一整數,其值一般為1~5. 與鈦痠鋇(BaTiO3)或鋯鈦痠鉛(PZT)陶瓷相比,鉍層狀壓電陶瓷具有以下特點:低介電常數、高T c、機電耦閤繫數各嚮異性明顯、低老化率、高電阻率等.
先前研究證明,居裏溫度不僅與極化原子位移、自髮極化彊度、A位Bi含量有關,而且還與取代離子的特性諸如離子半徑、電負性、覈外電子排佈有關. 壓電活性低是鉍層狀陶瓷的本質缺點,通常髮展該材料的途徑為化學取代或晶粒取嚮技術. 研究材料結構與性能之間的關繫有助于髮展鉍層狀壓電陶瓷材料.
종술료필층상압전도자적결구특점급성능연구. 필층상압전도자적결구유(Bi2O2)2+층화개태광층(Am-1BmO3m+1)2-안일정규칙공생배렬이성. 차처A위괄합우12배위적리자; B 위괄합우팔면체배위적리자,m위일정수,기치일반위1~5. 여태산패(BaTiO3)혹고태산연(PZT)도자상비,필층상압전도자구유이하특점:저개전상수、고T c、궤전우합계수각향이성명현、저노화솔、고전조솔등.
선전연구증명,거리온도불부여겁화원자위이、자발겁화강도、A위Bi함량유관,이차환여취대리자적특성제여리자반경、전부성、핵외전자배포유관. 압전활성저시필층상도자적본질결점,통상발전해재료적도경위화학취대혹정립취향기술. 연구재료결구여성능지간적관계유조우발전필층상압전도자재료.
This paper reviewed the structures and properties of bismuth layer-structured piezoelectric ceramics. The structures of bismuth layer-structured piezoelectric ceramics are built up by the regular intergrowth of (Bi2O2)2+layers and perovskite (Am-1BmO3m+1)2- slabs where A is a combination of cations adequate for 12-coordinated interstices, B is a combination of cations well suited to octahedral coordinated, and m is an integer usually lying to the range 1-5. By comparison with barium titanate (BaTiO3) or lead zirconate titanate (PZT) ceramics, the bismuth layer-structured piezoelectric ceramics are characterized by: (1) lower dielectric constant; (2) higher Curie temperature; (3) stronger anisotropy in electromechanical coupling factors; (4) lower ageing rate; (5) higher resistivity; …etc..
Previous studies showed that Curie temperature depends on atomic displacement of polarization cations, spontaneous polarization, bismuth content in the cubooctahedral cavities, and the nature of the substituting cations such as inonic radius, electronegativities and electronic configuration. An essentially weak point of bismuth layer-structured piezoelectric ceramics is low piezoelectric activity which can be solved by chemical substitution or fabrication methods for orientating the grains in ceramics. It is necessary to study the relationships between structures and properties of bismuth layer-structured piezoelectric ceramics in order to develop the materials.