发光学报
髮光學報
발광학보
CHINESE JOURNAL OF LUMINESCENCE
2002年
5期
461-464
,共4页
包春玉%黎子兰%陈志忠%秦志新%胡晓东%童玉珍%丁晓民%杨志坚%张国义
包春玉%黎子蘭%陳誌忠%秦誌新%鬍曉東%童玉珍%丁曉民%楊誌堅%張國義
포춘옥%려자란%진지충%진지신%호효동%동옥진%정효민%양지견%장국의
MSM%GaN%光电探测器%94K%室温
MSM%GaN%光電探測器%94K%室溫
MSM%GaN%광전탐측기%94K%실온
metal-semiconductor-metal (MSM)%GaN%photodetector%94K%room temperature
在采用MOCVD技术生长的GaN膜上制备出MSM紫外光探测器,分别在室温下和94K低温下,测量了探测器对不同光波长的响应、同一光波长下对不同偏压的响应、不同斩波频率下的响应.结果表明,在94K下响应有了很大的改善.当光波长从360nm增加到450nrm时,响应下降了3个数量级,而常温下只下降两个数量级,但探测器的时间响应常数变长了.
在採用MOCVD技術生長的GaN膜上製備齣MSM紫外光探測器,分彆在室溫下和94K低溫下,測量瞭探測器對不同光波長的響應、同一光波長下對不同偏壓的響應、不同斬波頻率下的響應.結果錶明,在94K下響應有瞭很大的改善.噹光波長從360nm增加到450nrm時,響應下降瞭3箇數量級,而常溫下隻下降兩箇數量級,但探測器的時間響應常數變長瞭.
재채용MOCVD기술생장적GaN막상제비출MSM자외광탐측기,분별재실온하화94K저온하,측량료탐측기대불동광파장적향응、동일광파장하대불동편압적향응、불동참파빈솔하적향응.결과표명,재94K하향응유료흔대적개선.당광파장종360nm증가도450nrm시,향응하강료3개수량급,이상온하지하강량개수량급,단탐측기적시간향응상수변장료.
Metal-semiconductor-metal ultraviolet photodetectors have been fabricated on undopedGaN films grown by metalorganic chemical-vapor deposition. Response dependence on wave-length, voltage bias and chopper frequency has been extensively investigated both at room tempe-rature and at 94K low temperature. The results show that the response time drops by more thanthree levels of magnitude when the incident light' s wavelength increases from 360 to 450nm at94K. For the incident light less than 360nm, its response time at 94K is about one level greaterthan that at room temperature. An increase in response time was also observed at 94K.
