半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2008年
3期
433-437
,共5页
车文毅%闫娜%杨玉庆%闵昊
車文毅%閆娜%楊玉慶%閔昊
차문의%염나%양옥경%민호
射频识别技术%标签%低电压%低功耗%温度补偿
射頻識彆技術%標籤%低電壓%低功耗%溫度補償
사빈식별기술%표첨%저전압%저공모%온도보상
RFID%tag%low voltage%low power%temperature compensation
提出了一种适用于无源超高频射频识别标签的低电压低功耗射频/模拟前端电路.通过引入一个使用亚阈值技术的基准源,电路实现了温度补偿,从而使得系统时钟在~40~100℃的范围内保持稳定.在模块设计中,提出了一些新的电路结构来降低系统功耗,其中包括一种零静态功耗的上电复位电路和一种新的稳压电路.该射频/模拟前端电路采用不带肖特基二极管0.18μm CMOS EEP-ROM工艺流片实现,它与数字基带、EEPROM一起实现了一个完整的标签芯片.测试结果表明,该芯片的最低电源电压要求为0.75V.在该最低电压下,射频/模拟前端电路的总电流为4.6μA.
提齣瞭一種適用于無源超高頻射頻識彆標籤的低電壓低功耗射頻/模擬前耑電路.通過引入一箇使用亞閾值技術的基準源,電路實現瞭溫度補償,從而使得繫統時鐘在~40~100℃的範圍內保持穩定.在模塊設計中,提齣瞭一些新的電路結構來降低繫統功耗,其中包括一種零靜態功耗的上電複位電路和一種新的穩壓電路.該射頻/模擬前耑電路採用不帶肖特基二極管0.18μm CMOS EEP-ROM工藝流片實現,它與數字基帶、EEPROM一起實現瞭一箇完整的標籤芯片.測試結果錶明,該芯片的最低電源電壓要求為0.75V.在該最低電壓下,射頻/模擬前耑電路的總電流為4.6μA.
제출료일충괄용우무원초고빈사빈식별표첨적저전압저공모사빈/모의전단전로.통과인입일개사용아역치기술적기준원,전로실현료온도보상,종이사득계통시종재~40~100℃적범위내보지은정.재모괴설계중,제출료일사신적전로결구래강저계통공모,기중포괄일충령정태공모적상전복위전로화일충신적은압전로.해사빈/모의전단전로채용불대초특기이겁관0.18μm CMOS EEP-ROM공예류편실현,타여수자기대、EEPROM일기실현료일개완정적표첨심편.측시결과표명,해심편적최저전원전압요구위0.75V.재해최저전압하,사빈/모의전단전로적총전류위4.6μA.
This paper presents a low voltage, low power RF/analog front-end circuit for passive ultra high frequency (UHF) radio frequency identification (RFID) tags. Temperature compensation is achieved by a reference generator using sub-threshold techniques. The chip maintains a steady system dock in a temperature range from-40 to 100℃. Some novel building blocks are developed to save system power consumption,including a zero static current power-on reset circuit and a voltage regulator. The RF/analog front-end circuit is implemented with digital base-band and EEPROM to construct a whole tag chip in 0.18μm CMOS EEPROM technology without Schottcky diodes. Measured results show that the chip has a minimum supply voltage requirement of 0. 75V. At this voltage, the total current consumption of the RF/analog front-end circuit is 4.6μA.