半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2008年
4期
719-723
,共5页
刘忠奇%孙旭光%白蓉蓉%张春%李永明%王志华
劉忠奇%孫旭光%白蓉蓉%張春%李永明%王誌華
류충기%손욱광%백용용%장춘%리영명%왕지화
射频识别%标签%肖特基管
射頻識彆%標籤%肖特基管
사빈식별%표첨%초특기관
RFID%Transponder%Schottky diode
设计了一种符合NCITS 256协议的无源超高频射频识别标签.标签携带2kbit的标准商用EEPROM.在读卡器发射功率为915MHz 4W EIRP的情况下,芯片的读距离为1.5m,写距离为0.3m.芯片在SMIC 0.18μm EEPROM CMOS工艺下流片实现,面积为1mm×1mm.标签使用Dickson倍压电路从读卡器发射的电磁波中提取能量.Dickson倍压电路使用肖特基管实现,转换效率为25%.
設計瞭一種符閤NCITS 256協議的無源超高頻射頻識彆標籤.標籤攜帶2kbit的標準商用EEPROM.在讀卡器髮射功率為915MHz 4W EIRP的情況下,芯片的讀距離為1.5m,寫距離為0.3m.芯片在SMIC 0.18μm EEPROM CMOS工藝下流片實現,麵積為1mm×1mm.標籤使用Dickson倍壓電路從讀卡器髮射的電磁波中提取能量.Dickson倍壓電路使用肖特基管實現,轉換效率為25%.
설계료일충부합NCITS 256협의적무원초고빈사빈식별표첨.표첨휴대2kbit적표준상용EEPROM.재독잡기발사공솔위915MHz 4W EIRP적정황하,심편적독거리위1.5m,사거리위0.3m.심편재SMIC 0.18μm EEPROM CMOS공예하류편실현,면적위1mm×1mm.표첨사용Dickson배압전로종독잡기발사적전자파중제취능량.Dickson배압전로사용초특기관실현,전환효솔위25%.
This paper presents a passive UHF radio frequency identification (RFID) transponder with 2k bit standard commercial EEPROM in compliance with the NCITS 256 protocol. The communication range is 1.5m for the read operation and 0.3m for the write operation with 4W effective isotropic radiated power (EIRP) at 915MHz. The integrated IC is implemented in SMIC 0.18μm EEPROM CMOS technology. The die size is 1mm × 1mm. The energy of the tag is harvested from RF electromagnetic waves transmitted by the reader with the help of a Schottky diode rectifier and achieves 25% power efficiency.