CAJ | 학술논문

采用传统陶瓷制备工艺制备(1-x)Ba_(0.998)La_(0.002)TiO_3+ xBi_4Ti_3O_(12) (0≤x≤0.01)系统陶瓷.对在还原气氛(氮气)中烧成的陶瓷样品在一定温度下进行再氧化处理.研究了不同Bi_4Ti_3O_(12)掺杂浓度以及再氧化过程对BaTiO_3微观结构、介电性能及居里温度Tc的影响.结果表明:掺杂Bi_4Ti_3O_(12)后,BaTiO_3陶瓷的晶粒尺寸明显减小;Bi_4Ti_3O_(12)具有提高陶瓷居里点温度的作用,当x=1.0时,居里温度提高到T_c=150 ℃.随着BIT加入量的增加,电子与缺位混合补偿,晶格中将产生金属离子缺位,以补偿多余电子,因此随着BIT掺入量的增加,电阻率逐渐增大.
채용전통도자제비공예제비(1-x)Ba_(0.998)La_(0.002)TiO_3+ xBi_4Ti_3O_(12) (0≤x≤0.01)계통도자.대재환원기분(담기)중소성적도자양품재일정온도하진행재양화처리.연구료불동Bi_4Ti_3O_(12)참잡농도이급재양화과정대BaTiO_3미관결구、개전성능급거리온도Tc적영향.결과표명:참잡Bi_4Ti_3O_(12)후,BaTiO_3도자적정립척촌명현감소;Bi_4Ti_3O_(12)구유제고도자거리점온도적작용,당x=1.0시,거리온도제고도T_c=150 ℃.수착BIT가입량적증가,전자여결위혼합보상,정격중장산생금속리자결위,이보상다여전자,인차수착BIT참입량적증가,전조솔축점증대.
(1-x)Ba_(0.998)La_(0.002)TiO_3 + xBi_4Ti_3O_(12) (0≤x≤0.01) system ceramics were prepared by solid-state reaction technology. The samples were sintered in reducing atmosphere (nitrogen) and then reoxidized. The microstructure of samples were characterized by SEM, electrical properties were analyzed by the resistivity-temperature testing apparatus and capacitance testing selector. The results showed that the grain size of BaTiO_3 ceramics significantly decreased after doping Bi_4Ti_3O_(12); Curie temperature of ceramics increased (T_c= 150 ℃). As the addition of the amount of BIT increasing, the electron and vacancies compensated each other, extra electrons were compensated with lattice metal ions vacancy, thus resistivity gradually increased.