CAJ | 학술논문

利用电子束真空蒸镀方法制作了Ge薄膜,用作感应读出方式光子计数成像系统的电荷感应层,研究了石英玻璃衬底和陶瓷衬底上Ge薄膜的结构特征、表面形态以及各种工艺参数对薄膜电阻的影响.X射线衍射(XRD)测试表明,两种衬底上沉积的Ge薄膜均为立方相非晶态.场发射扫描电子显微镜(FESEM)图像表明石英玻璃衬底上的薄膜致密平整,陶瓷衬底上的薄膜比较粗糙,厚度较薄时,陶瓷晶界处薄膜不连续导致电阻较大.通过改变沉积速率、薄膜厚度及采用退火的方法可以控制薄膜电阻.对比了采用不同阻值电荷感应层时系统的性能,发现阻值对探测器的分辨率影响小,对计数率影响较大.
이용전자속진공증도방법제작료Ge박막,용작감응독출방식광자계수성상계통적전하감응층,연구료석영파리츤저화도자츤저상Ge박막적결구특정、표면형태이급각충공예삼수대박막전조적영향.X사선연사(XRD)측시표명,량충츤저상침적적Ge박막균위립방상비정태.장발사소묘전자현미경(FESEM)도상표명석영파리츤저상적박막치밀평정,도자츤저상적박막비교조조,후도교박시,도자정계처박막불련속도치전조교대.통과개변침적속솔、박막후도급채용퇴화적방법가이공제박막전조.대비료채용불동조치전하감응층시계통적성능,발현조치대탐측기적분변솔영향소,대계수솔영향교대.
The Ge thin films applied in photon counting imaging system based on Ge induction readout were fabricated by electron beam evaporation. The structures of Ge thin films deposited on ceramic and quartz glass substrates and influences of technical parameters on resistance were studied. The X-ray diffraction (XRD) analysis of thin films deposited on the two substrates shows that the thin films deposiited on two kinds of substrates both have cubic amorphous Ge structure. The field emission scanning electron microscopy (FESEM) images indicate that the film deposited on quartz glass is more compact and smooth than that deposited on the ceramic substrate. If the film on the ceramic substrate is too thin, the film is discontinuous, which induces the high resistance. The resistance can be controlled by annealing, depositing rate, or thickness of film. The performance of the system, which adopted Ge layers with different resistance, was studied. These results suggest that resistance of the charge induced layer influences spatial resolution less than the counting rate.