中国光学快报(英文版)
中國光學快報(英文版)
중국광학쾌보(영문판)
CHINESE JOURNAL OF LASERS
2003年
8期
472-474
,共3页
陆巧银%陈晓红%国伟华%于丽娟%黄永箴%王建%罗毅
陸巧銀%陳曉紅%國偉華%于麗娟%黃永箴%王建%囉毅
륙교은%진효홍%국위화%우려연%황영잠%왕건%라의
Equilateral triangle semiconductor microcavities with tensile-strained InGaAsP multi-quantum-well asthe active region are fabricated by the inductively coupled plasma (ICP) etching technique. The modecharacteristics of the fabricated microcavities are investigated by photoluminescence, and enhanced peaksof the photoluminescence spectra corresponding to the fundamental transverse modes are observed formicrocavities with side lengths of 5 and 10 μm. The mode wavelength spacings measured experimentallycoincide very well with those obtained by the theoretical formulae.
