CAJ | 학술논문

研究了Si1-x-yGexCy三元系材料的应变补偿特性，分析了固相外延方法制备的样品中注入离子的分布对应变补偿效果的影响，指出由于Ge和C的投影射程及标准偏差不同，二者在各处的组分比并不恒定，存在着纵向分布，因此各处的应变补偿情况也不尽相同．利用高斯公式对不同位置的应变补偿效果进行了分析，得出了外延层中存在应变完全补偿区域时Ge、C的峰值浓度比NGe/NＣ应满足一定的取值范围．通过制备不同C组分的样品对上述结论进行了验证，得出的结果与理论预言基本相符．
연구료Si1-x-yGexCy삼원계재료적응변보상특성，분석료고상외연방법제비적양품중주입리자적분포대응변보상효과적영향，지출유우Ge화C적투영사정급표준편차불동，이자재각처적조분비병불항정，존재착종향분포，인차각처적응변보상정황야불진상동．이용고사공식대불동위치적응변보상효과진행료분석，득출료외연층중존재응변완전보상구역시Ge、C적봉치농도비NGe/NＣ응만족일정적취치범위．통과제비불동C조분적양품대상술결론진행료험증，득출적결과여이론예언기본상부．
The strain-compensation characteristics of Si1-x-yGexCy ternary alloys made by Solid Phase Epitaxial Recrystallization(SPER) are studied.It should be pointed out that because of the difference in both the projected range(Rp)and the straggle of ions(ΔRp) for Ge and C,the ratio of Ge/C is not a constant at different depth,as leads to the difference in strain-compensation effects.Gauss formula is used to analyze the strain-compensation at different position in the alloy layers.The conclusion drawn shows that the ratio of the peak densities of Ge and C ions(NGe/NC)should be within a limit when there exists a full strain compensated area in the epitaxial layers.A series of samples with different C composition have been prepared and the strain-compensation characteristics detected.The experimental results are coincided with the predictions very well.