CAJ | 학술논문

介绍了一种超宽带DC-40GHz的4位单片数字衰减器.该衰减器采用0.25 μm砷化镓pHEMT工艺制造.据我所知,这种衰减器是至今国内文献报道中带宽最宽的.它通过采用适当的结构来得到超宽的带宽、低插入损耗以及高衰减精度.该衰减器具有1 dB的衰减步进和15 dB的衰减动态范围,插入损耗在40 GHz时小于5 dB,全衰减态及全频带内的输入输出回波损耗大于12 dB.
개소료일충초관대DC-40GHz적4위단편수자쇠감기.해쇠감기채용0.25 μm신화가pHEMT공예제조.거아소지,저충쇠감기시지금국내문헌보도중대관최관적.타통과채용괄당적결구래득도초관적대관、저삽입손모이급고쇠감정도.해쇠감기구유1 dB적쇠감보진화15 dB적쇠감동태범위,삽입손모재40 GHz시소우5 dB,전쇠감태급전빈대내적수입수출회파손모대우12 dB.
This Paper Proposes a Design Method of a Broadband 4-Bit Monolithic Microwave Integrated Circuit (MMIC) Digital Attenuator. It is fabricated with 0.25 μm GaAs pseudomorphic High Electron Mobility Transistors (pHEMT) process. The attenuator's DC-40GHz bandwidth is the broadest one yet reported in domestic literatures to the best of my knowledge. Low reference state insertion loss and high attenuation accuracy are also obtained by using appropriate configuration. This attenuator has 1 dB resolution and 15 dB dynamic range. The reference state insertion loss is less than 5 dB at 40 GHz. The input and output return losses are better than 12 dB over all attenuation states and operating frequencies.