CAJ | 학술논문

主要概述了目前集成电路由两维的平面集成向3维的立体集成转变过程中的主流和热点技术,包括后道封装制程中实现裸片堆叠、载体堆叠和封装体堆叠的TSV三维封装,以及前道晶圆制程中将传统的晶体管二维平面结构向三维立体结构的多栅晶体管过渡的创新技术。根据全球半导体联盟打造3D集成电路计划和目前应对垂直集成技术的工艺设备现状,展望了半导体垂直集成技术实现量产的前景。
주요개술료목전집성전로유량유적평면집성향3유적입체집성전변과정중적주류화열점기술,포괄후도봉장제정중실현라편퇴첩、재체퇴첩화봉장체퇴첩적TSV삼유봉장,이급전도정원제정중장전통적정체관이유평면결구향삼유입체결구적다책정체관과도적창신기술。근거전구반도체련맹타조3D집성전로계화화목전응대수직집성기술적공예설비현상,전망료반도체수직집성기술실현양산적전경。
The essentials and hot technologies of the present IC changing into three-dimensional integrated IC from two-dimensional planar IC is described in this paper,including the TSV 3D packaging of die stacking,carrier stack and package on package,as well as the innovative technology that emerged during the transition from front-end wafer processing the traditional two-dimensional transistor structure to a three-dimensional structure multi-gate transistor.According to the plan to build 3D integrated circuits of Global Semiconductor Allianc（GSA）and the status response to the vertical integration of process equipment,Outlook the prospects of the semiconductor vertical integration processing mass production.