电子工业专用设备
電子工業專用設備
전자공업전용설비
EQUIPMENT FOR ELECTRONIC PRODUCTS MANUFACTURING
2004年
2期
66-69,86
,共5页
化学机械抛光%板刷擦洗%晶圆表面
化學機械拋光%闆刷抆洗%晶圓錶麵
화학궤계포광%판쇄찰세%정원표면
Chemical-mechanical polishing (CMP)%Brush scrubbing%Wafer surfaces
板刷擦洗是一种在化学机械抛光后清洗中常用的方法.它可以非常有效地把研磨剂颗粒从已抛光的晶圆表面去除掉.在氧化硅化学机械抛光的清洗工艺中,去离子水(或者稀释的氢氧化氨)是刷洗过程中常用的化学品起到的作用及刷洗的机械力对去除氧化硅研磨剂颗粒时所起的作用.
闆刷抆洗是一種在化學機械拋光後清洗中常用的方法.它可以非常有效地把研磨劑顆粒從已拋光的晶圓錶麵去除掉.在氧化硅化學機械拋光的清洗工藝中,去離子水(或者稀釋的氫氧化氨)是刷洗過程中常用的化學品起到的作用及刷洗的機械力對去除氧化硅研磨劑顆粒時所起的作用.
판쇄찰세시일충재화학궤계포광후청세중상용적방법.타가이비상유효지파연마제과립종이포광적정원표면거제도.재양화규화학궤계포광적청세공예중,거리자수(혹자희석적경양화안)시쇄세과정중상용적화학품기도적작용급쇄세적궤계력대거제양화규연마제과립시소기적작용.
Brush scrubbing is widely used in post-CMP cleaning applications. It is highly effective in removing slurry abrasive particles from the polished wafer surfaces. In oxide CMP cleaning, DIW is commonly used during brush scrubbing. The role of mechanic force from the brushes in removing oxide slurry particles is studied in this work.The rest of this paper focuses on the effects of chemicals used in-situ with mechanical brush scrubbing. The chemical requirement for various post-CMP cleaning applications will be detailed in this paper.It is shown that the combined mechanical and chemical actions often give the best cleaning performance.
