CAJ | 학술논문

以光子晶体Fabry-Perot腔为例,提出了全电子束光刻制作光子晶体波导器件的解决方案.曝光光子晶体区域时采用较小的曝光步长,同时引入额外的邻近效应补偿本征邻近效应,从而获得高质量的掩模图形.曝光较长的输入、输出波导时,采用较大的曝光步长以提高电子束扫描速度,同时在波导的写场(write-field)过渡区引入一个锥形波导以减小写场拼接误差对光传输效率的影响.实验结果证明,这种方法既能保持小孔制作需要的高精度,也能很大程度上提高光刻效率.
이광자정체Fabry-Perot강위례,제출료전전자속광각제작광자정체파도기건적해결방안.폭광광자정체구역시채용교소적폭광보장,동시인입액외적린근효응보상본정린근효응,종이획득고질량적엄모도형.폭광교장적수입、수출파도시,채용교대적폭광보장이제고전자속소묘속도,동시재파도적사장(write-field)과도구인입일개추형파도이감소사장병접오차대광전수효솔적영향.실험결과증명,저충방법기능보지소공제작수요적고정도,야능흔대정도상제고광각효솔.
We present an all-e-beam lithography (EBL) process for the patterning of photonic crystal waveguides.The whole device structures are exposed in two steps. Holes constituting the photonic crystal lattice and defects are first exposed with a small exposure step size (less than 10nm). With the introduction of the additional proximity effect to compensate the original proximity effect, the shape, size, and position of the holes can be well controlled.The second step is the exposure of the access waveguides at a larger step size (about 30nm) to improve the scan speed of the EBL. The influence of write-field stitching error can be alleviated by replacing the original waveguides with tapered waveguides at the joint of adjacent write-fields. It is found experimentally that a higher exposure efficiency is achieved with a larger step size;however,a larger step size requires a higher dose.